Over the past four decades, single event upset (SEU) and single event multiple node upset
(SEMNU) have become the major issues in the memory area. Moreover, these upsets are …

Deep sub-micron memory devices play a crucial role in space electronic applications due to
their susceptibility to single-event upset and double-node upset types of soft errors. When a …

With aggressive scaling of transistor size and supply voltage, the critical charge of the
sensitive nodes is reducing rapidly. As a result, when these deep submicron devices are …

This paper proposes a highly robust 16 transistor soft-error resilient SRAM cell (SERSC-
16T) to provide complete resilience to single event upsets (SEU). The proposed cell is …

This paper proposed a radiation-hardened memory cell (RHMC12T) by polar design for
space applications. The proposed cell has the following advantages:(1) it can tolerate all …

As the feature size of transistors scaling down, the integration density of memory circuits
such as Static random access memory (SRAM) cells increases, and they are more sensitive …

In advanced technology nodes, SRAM cells, used in the aerospace industry, have become
highly susceptible to soft-error. In this brief, a Soft-Error-Aware Read-Decoupled 14T …

With continuous advancement in technology, latches have become highly susceptible to
radiation induced soft-errors such as multi-node-upsets (MNU). To effectively resilient the …

With technology scaling, transistor sizing as well as the distance between them, is
decreasing rapidly, thereby reducing the critical charge of sensitive nodes. This reduction …

Various charged particles in space, including α-particles, neutrons, heavy ions, and photons,
create stability and reliability concerns in memory circuits. Furthermore, these particles …