Integrated circuits (ICs) and optoelectronic chips are the foundation stones of the modern
information society. The IC industry has been driven by the so-called “Moore's law” in the …

GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from
the high-frequency power amplifier to the high voltage devices used in power electronic …

The semiconductor industry is transitioning to the 'More Moore'era, driven by the adoption of
three-dimensional (3D) integration schemes surpassing the limitations of traditional two …

Power and RF electronics applications have spurred massive investment into a range of
wide and ultrawide bandgap semiconductor devices which can switch large currents and …

An overview is presented of the significant influences of Moore's Law scaling on radiation
effects on microelectronics, focusing on historical trends and future needs. A number of …

Monolithic three-dimensional (M3D) integration is being increasingly adopted by the
semiconductor industry as an alternative to traditional through-silicon via technology as a …

The next decade will usher in a new era of technological innovation where compute,
communications, and intelligence will converge. The number of connected devices is …

Over recent decades, advancements in complementary metal-oxide-semiconductor
integrated circuits (ICs) have mainly relied on structural innovations in transistors. From …

This work reports recent progress in the sub-6 GHz power performance of GaN-based
HEMTs grown on high resistivity silicon substrates with passivation implanted termination …

We demonstrate industry's first 300 mm GaN transistor technology and 3-D monolithic
heterogeneous integration with Si transistors, enabled by 300 mm GaN metal-organic …