In Situ Dielectric Al2O3/β‐Ga2O3 Interfaces Grown Using Metal–Organic Chemical Vapor Deposition
S Roy, AE Chmielewski… - Advanced Electronic …, 2021 - Wiley Online Library
High quality dielectric‐semiconductor interfaces are critical for reliable high‐performance
transistors. This paper reports the in situ metal–organic chemical vapor deposition of Al2O3 …
transistors. This paper reports the in situ metal–organic chemical vapor deposition of Al2O3 …
[HTML][HTML] An improved methodology for extracting interface state density at Si3N4/GaN
In this Letter, a series of metal-insulator-semiconductor capacitors consisting of Si 3 N 4
dielectrics with different thicknesses on GaN have been fabricated to investigate their …
dielectrics with different thicknesses on GaN have been fabricated to investigate their …
In situ MOCVD growth and band offsets of Al2O3 dielectric on β-Ga2O3 and β-(AlxGa1− x) 2O3 thin films
The in situ metalorganic chemical vapor deposition (MOCVD) growth of Al 2 O 3 dielectrics
on β-Ga 2 O 3 and β-(Al x Ga 1− x) 2 O 3 films is investigated as a function of crystal …
on β-Ga 2 O 3 and β-(Al x Ga 1− x) 2 O 3 films is investigated as a function of crystal …
[HTML][HTML] Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
UV-assisted capacitance–voltage (C–V) and current–voltage (I–V) measurements were
performed on∼ 20 nm HfO 2/GaN metal–insulator–semiconductor capacitors. The effects of …
performed on∼ 20 nm HfO 2/GaN metal–insulator–semiconductor capacitors. The effects of …
Interface trap characterization of Al2O3/GaN vertical-type MOS capacitors on GaN substrate with surface treatments
We report on the interface trap properties Al 2 O 3/GaN vertical-type metal-oxide-
semiconductor (MOS) capacitors homogeneously grown on GaN substrates with different …
semiconductor (MOS) capacitors homogeneously grown on GaN substrates with different …
Capacitance-voltage characterization of interfaces between positive valence band offset dielectrics and wide bandgap semiconductors
A photo-assisted capacitance voltage (CV) characterization technique for interfaces
between positive valence band offset dielectrics (Al 2 O 3, SiO 2) and wide bandgap …
between positive valence band offset dielectrics (Al 2 O 3, SiO 2) and wide bandgap …
Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition
In situ Al 2 O 3 on Ga-face GaN metal-oxide-semiconductor capacitors (MOSCAPs) were
grown by metalorganic chemical vapor deposition and measured using capacitance-voltage …
grown by metalorganic chemical vapor deposition and measured using capacitance-voltage …
Reliability of power devices: Bias-induced threshold voltage instability and dielectric breakdown in GaN MIS-HEMTs
G Meneghesso, D Bisi, I Rossetto… - 2016 IEEE …, 2016 - ieeexplore.ieee.org
This paper reviews the most relevant threshold-voltage instabilities and dielectric
breakdown mechanisms in GaN-based transistors with metal-insulator-semiconductor gate …
breakdown mechanisms in GaN-based transistors with metal-insulator-semiconductor gate …
Metalorganic chemical vapor deposition and characterization of (Al, Si) O dielectrics for GaN-based devices
In this paper, we report on the growth and electrical characterization of (Al, Si) O dielectrics
grown by metalorganic chemical vapor deposition (MOCVD) using trimethylaluminum …
grown by metalorganic chemical vapor deposition (MOCVD) using trimethylaluminum …
[HTML][HTML] Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN
The electrical properties and trapping characteristics of Si 3 N 4 and SiO 2 dielectrics grown
in situ on (000-1) N-polar GaN by metal organic chemical vapor deposition are investigated …
in situ on (000-1) N-polar GaN by metal organic chemical vapor deposition are investigated …