[HTML][HTML] Quantum confinement in Si and Ge nanostructures: Theory and experiment
The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum
dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication …
dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication …
Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays
R Bergamaschini, F Isa, CV Falub, P Niedermann… - Surface science …, 2013 - Elsevier
In this report we present a novel strategy in selective epitaxial growth on top of Si pillars,
which results in a tessellated Ge film, composed by self-aligned micron-sized crystals in a …
which results in a tessellated Ge film, composed by self-aligned micron-sized crystals in a …
Optical spin injection and spin lifetime in Ge heterostructures
We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin
properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge …
properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge …
Strain relaxation in high Ge content SiGe layers deposited on Si
We have used Raman spectroscopy, transmission electron microscopy, x-ray diffraction, and
x-ray photoemission spectroscopy to investigate strain relaxation mechanism of Si 0.22 Ge …
x-ray photoemission spectroscopy to investigate strain relaxation mechanism of Si 0.22 Ge …
Ultrafast nonlinear optical response of photoexcited Ge/SiGe quantum wells: Evidence for a femtosecond transient population inversion
Femtosecond time-resolved pump-probe spectroscopy is used to investigate the ultrafast
carrier dynamics of Ge/SiGe quantum wells grown on a Si substrate. Pronounced …
carrier dynamics of Ge/SiGe quantum wells grown on a Si substrate. Pronounced …
Spectral asymmetry of phonon sideband luminescence in monolayer and bilayer
V Funk, K Wagner, E Wietek, JD Ziegler, J Förste… - Physical Review …, 2021 - APS
We report an experimental study of temperature-dependent spectral line shapes of phonon
sideband emission stemming from dark excitons in monolayer and bilayer WSe 2. Using …
sideband emission stemming from dark excitons in monolayer and bilayer WSe 2. Using …
Genomic design of strong direct-gap optical transition in Si/Ge core/multishell nanowires
Finding a Si-based material with strong optical activity at the band-edge remains a
challenge despite decades of research. The interest lies in combining optical and electronic …
challenge despite decades of research. The interest lies in combining optical and electronic …
[图书][B] Silicon, germanium, and their alloys: growth, defects, impurities, and nanocrystals
G Kissinger, S Pizzini - 2014 - books.google.com
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …
materials still demand research, eminently in view of the improvement of knowledge on …
Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures
P Chaisakul, D Marris-Morini, G Isella, D Chrastina… - Optics letters, 2010 - opg.optica.org
We investigate the room-temperature quantum-confined Stark effect in Ge/SiGe multiple
quantum wells (MQWs) grown by low-energy plasma-enhanced chemical vapor deposition …
quantum wells (MQWs) grown by low-energy plasma-enhanced chemical vapor deposition …
Extended density-matrix model applied to silicon-based terahertz quantum cascade lasers
Silicon-based terahertz quantum cascade lasers (QCLs) offer potential advantages over
existing III-V devices. Although coherent electron transport effects are known to be important …
existing III-V devices. Although coherent electron transport effects are known to be important …