[PDF][PDF] Physical design to verify theoretical 0.1 ppm/C stability in a bandgap type circuit

A Polanco, A Nagy, M Alvarez - Energía y Computación, 2005 - academia.edu
The propose of this paper is the experimental validation of a temperature coefficient less
than 0.2 ppm/C, theoretically obtained in a low-voltage bandgap references type circuit …

A novel voltage output integrated circuit temperature sensor

W Xiao-bo, Z Meng-lian, F Zhi-gang… - Journal of Zhejiang …, 2002 - Springer
The novel integrated circuit (IC) temperature sensor presented in this paper works similarly
as a two-terminal Zener, has breakdown voltage directly proportional to Kelvin temperature …

[PDF][PDF] COEFFICIENT VIA EMITTER CAPACITANCE

R AMADOR, A NAGY, M ALVAREZ, A POLANCO - 161.111.232.132
The need to increase accuracy and stability in the design of temperature sensors and
bandgap references has lead to recent experimental studies of the emission coefficient n.. In …

[PDF][PDF] EXPERIMENTAL 0.1 PPM/C IN A LOW-VOLTAGE CURVATURE-CORRECTED BANDGAP TYPE CIRCUIT.

R Amador, A Polanco, A Nagy, M Alvarez - 161.111.232.132
An accurate design method of a low-voltage curvature-corrected bandgap type circuit was
previosly reported in DCIS2000, that achieved a theoretical temperature coefficient of less …

Contributions to improve design accuracy of bipolar ICs via physical effects

A Nagy, A Polanco, M Alvarez - … of the 20th annual conference on …, 2007 - dl.acm.org
The base-emitter voltage, due to its extremely reproducible exponential characteristic, is the
basic element in the design of IC temperature sensors and temperature compensated …

[HTML][HTML] Mathematical formulation of restrictions for the design of low voltage bandgap references

A Polanco, A Nagy, M Álvarez - Revista Facultad de Ingeniería …, 2011 - scielo.org.co
Nowadays the qualities more looked for in the design of bandgap references are the low
potential of the reference and the low value of its coefficient of temperature, being these …

Modeling and extraction of parameters based on physical effects in bipolar transistors

A Nagy, A Polanco, M Alvarez - Active and Passive Electronic …, 2011 - Wiley Online Library
The rising complexity of electronic systems, the reduction of components size, and the
increment of working frequencies demand every time more accurate and stable integrated …

Restricciones en el diseno de referencias bandgap de bajo potencial

AP Risquet, A Nagy, MA Blanco - Ingeniería Electrónica, Automática y …, 2007 - go.gale.com
Actualmente las cualidades más buscadas de las referencias bandgap son el bajo potencial
de referencia y el bajo valor del coeficiente de temperatura, siendo estos parámetros más …

Dispersion tecnologica del voltaje base-emisor en la exactitud de una fuente de bandgap

A Polanco, R Amador - Ingeniería Electrónica, Automática y …, 2000 - go.gale.com
En la actualidad se mantiene el interés en las fuentes de voltaje de referencia bandgap
utilizando tecnología bipolar y todas requieren ajuste final debido a la dispersión de los …

Influencia de la capacidad del emisor sobre el coeficiente de emision del transistor bipolar

R Amador, A Nagy, M Alvarez… - … Electrónica, Automática y …, 2003 - go.gale.com
Estudios experimentales recientes han reportado un aumento del coeficiente de emisión na
bajas temperaturas y corrientes de polarización constante. En este trabajo se muestra …