[HTML][HTML] Optimization of non-linear conductance modulation based on metal oxide memristors

H Liu, M Wei, Y Chen - Nanotechnology Reviews, 2018 - degruyter.com
As memristor-simulating synaptic devices have become available in recent years, the
optimization on non-linearity degree (NL, related to adjacent conductance values) is …

Self-supported nanostructured iridium-based networks as highly active electrocatalysts for oxygen evolution in acidic media

AW Jensen, GW Sievers, KD Jensen… - Journal of Materials …, 2020 - pubs.rsc.org
Due to the slow kinetics of the oxygen evolution reaction (OER), high precious metal
loadings are currently required at the anode of proton exchange membrane (PEM) …

Bipolar, complementary resistive switching and synaptic properties of sputtering deposited ZnSnO-based devices for electronic synapses

M Ismail, C Mahata, H Abbas, C Choi, S Kim - Journal of Alloys and …, 2021 - Elsevier
In this work, ZnSnO-based resistive switching (RS) devices were fabricated with different top
electrodes (TEs) to investigate the RS and synaptic characteristics for neuromorphic …

Controlled multilevel switching and artificial synapse characteristics in transparent HfAlO-alloy based memristor with embedded TaN nanoparticles

C Mahata, H Algadi, M Ismail, D Kwon, S Kim - Journal of Materials Science …, 2021 - Elsevier
Atomic layer deposition technique has been used to prepare tantalum nitride nanoparticles
(TaN-NPs) and sandwiched between Al-doped HfO 2 layers to achieve ITO/HfAlO/TaN …

Controlling Resistive Switching by Using an Optimized MoS2 Interfacial Layer and the Role of Top Electrodes on Ascorbic Acid Sensing in TaOx-Based RRAM

JT Qiu, S Samanta, M Dutta, S Ginnaram, S Maikap - Langmuir, 2019 - ACS Publications
Controlled resistive switching by using an optimized 2 nm thick MoS2 interfacial layer and
the role of top electrodes (TEs) on ascorbic acid (AA) sensing in a TaO x-based resistive …

[HTML][HTML] Verification of charge transfer in metal-insulator-oxide semiconductor diodes via defect engineering of insulator

D Lee, JW Park, NK Cho, J Lee, YS Kim - Scientific Reports, 2019 - nature.com
Abstract In a MIS (Metal/Insulator/Semiconductor) structure consisting of two terminals, a
systematic analysis of the electrical charge transport mechanism through an insulator is …

Switching the resistive memory behavior from binary to ternary logic via subtle polymer donor and molecular acceptor design

S Pan, Z Zhu, H Yu, W Lan, B Wei, K Guo - Journal of Materials …, 2021 - pubs.rsc.org
Emerging organic resistive switching memory (ORSM) devices, in which active organic
materials possess at least two stable resistance states have attracted considerable attention …

Modulating the ferroelectricity of hafnium zirconium oxide ultrathin films via interface engineering to control the oxygen vacancy distribution

J Lee, MS Song, WS Jang, J Byun… - Advanced Materials …, 2022 - Wiley Online Library
Hafnium oxides‐based ferroelectric materials are promising for applications in nonvolatile
memory devices. To control the ferroelectricity of such materials, it is necessary to tune their …

Performance enhancement of TaOx resistive switching memory using graded oxygen content

B Wang, KH Xue, HJ Sun, ZN Li, W Wu, P Yan… - Applied Physics …, 2018 - pubs.aip.org
We compared the resistive switching performances of built-in graded oxygen concentration
TaO x films and uniform TaO x films under the 100 μA compliance current. The device with a …

[HTML][HTML] Facile Synthesis of Ti/TiN/TiON/TiO2 Composite Particles for Plasmon-Enhanced Solar Photocatalytic Decomposition of Methylene Blue

A Muslimov, F Orudzhev, M Gadzhiev, D Selimov… - Coatings, 2022 - mdpi.com
The present work studies the interrelation of the structural-phase composition and
morphology of composite Ti/TiN/TiON/TiO2 microparticles with their catalytic properties …