Low hole mobility of nitride semiconductors is a significant impediment to realizing their high- efficiency device applications. Scandium nitride (ScN), an emerging rocksalt indirect band …
Acoustic phonons in piezoelectric materials strongly couple to electrons through a macroscopic electric field. We show that this coupling leads to a momentum-dependent …
Strain engineering is a widely used technique for enhancing the mobility of charge carriers in semiconductors, but its effect is not fully understood. In this work, we perform first …
B Gao, W Wang, Y Meng, C Du, Y Long, Y Zhang… - Small, 2024 - Wiley Online Library
As demand for higher integration density and smaller devices grows, silicon‐based complementary metal‐oxide‐semiconductor (CMOS) devices will soon reach their ultimate …
S Li, L Zhang - npj Computational Materials, 2024 - nature.com
The realm of chemiresistive gas sensors has witnessed a notable surge in interest in two- dimensional (2D) materials. The advancement of high-performance 2D gas sensing …
Z Dai, F Giustino - Proceedings of the National Academy of Sciences, 2024 - pnas.org
Titanium dioxide (TiO2) is a wide-gap semiconductor with numerous applications in photocatalysis, photovoltaics, and neuromorphic computing. The unique functional …
VA Ha, F Giustino - npj Computational Materials, 2024 - nature.com
Abstract 2D semiconductors offer a promising pathway to replace silicon in next-generation electronics. Among their many advantages, 2D materials possess atomically-sharp surfaces …
A first-principles computational method with self-consistent on-site and intersite Hubbard functionals is able to treat local and nonlocal Coulomb interactions on an equal footing. To …
Electron mobility in nitride semiconductors is limited by electron–phonon, defect, grain- boundary, and dislocation scatterings. Scandium nitride (ScN), an emerging rocksalt indirect …