Sensitivity of field-effect transistor-based terahertz detectors
This paper presents an overview of the different methods used for sensitivity (ie, responsivity
and noise equivalent power) determination of state-of-the-art field-effect transistor-based …
and noise equivalent power) determination of state-of-the-art field-effect transistor-based …
Nanomaterials and devices for harvesting ambient electromagnetic waves
This manuscript presents an overview of the implications of nanomaterials in harvesting
ambient electromagnetic waves. We show that the most advanced electromagnetic …
ambient electromagnetic waves. We show that the most advanced electromagnetic …
Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature
The microwave detection capability of GaN-based asymmetric planar nanodiodes (so-called
Self-Switching Diode, SSD, due to its non-linearity) has been characterized in a wide …
Self-Switching Diode, SSD, due to its non-linearity) has been characterized in a wide …
Terahertz detection in zero-bias InAs self-switching diodes at room temperature
A Westlund, P Sangaré, G Ducournau… - Applied Physics …, 2013 - pubs.aip.org
RF characterization of InAs self-switching diodes (SSDs) is reported. On-wafer
measurements revealed no roll-off in responsivity in the range of 2–315 GHz. At 50 GHz, a …
measurements revealed no roll-off in responsivity in the range of 2–315 GHz. At 50 GHz, a …
Graphene self-switching diodes as zero-bias microwave detectors
Self-switching diodes (SSDs) were fabricated on as-grown and hydrogen-intercalated
epitaxial graphene on SiC. The SSDs were characterized as zero-bias detectors with on …
epitaxial graphene on SiC. The SSDs were characterized as zero-bias detectors with on …
Integration of antenna array and self-switching graphene diode for detection at 28 GHz
In this letter, a rectenna based on a graphene self-switching diode is presented. The
nonlinear behavior of the diode is beneficial to efficiently detect the RF power in the Ka …
nonlinear behavior of the diode is beneficial to efficiently detect the RF power in the Ka …
Room temperature direct and heterodyne detection of 0.28–0.69-THz waves based on GaN 2-DEG unipolar nanochannels
C Daher, J Torres, I Iñiguez-De-La-Torre… - … on Electron Devices, 2015 - ieeexplore.ieee.org
An experimental demonstration of GaN-based asymmetric nanodiodes as direct and
heterodyne detectors up to 0.69 THz has been performed at room temperature …
heterodyne detectors up to 0.69 THz has been performed at room temperature …
On the practical limitations for the generation of Gunn oscillations in highly doped GaN diodes
S García-Sánchez, M Abou Daher… - … on Electron Devices, 2023 - ieeexplore.ieee.org
Planar Gunn diodes based on doped GaN active layers with different geometries have been
fabricated and characterized. Gunn oscillations have not been observed due to the …
fabricated and characterized. Gunn oscillations have not been observed due to the …
Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes
The detection capability of GaN-based nano-diodes is measured up to 110 GHz in two
configuration schemes: voltage and current responsivity. The ratio between both figures of …
configuration schemes: voltage and current responsivity. The ratio between both figures of …
Estimation of intrinsic and extrinsic capacitances of graphene self-switching diode using conformal mapping technique
Due to a very high carrier concentration and low band gap, graphene based self-switching
diodes do not demonstrate a very high rectification ratio. Despite that, it takes the advantage …
diodes do not demonstrate a very high rectification ratio. Despite that, it takes the advantage …