Polycrystalline InGaO Thin‐Film Transistors with Coplanar Structure Exhibiting Average Mobility of ≈78 cm2 V‐1 s‐1 and Excellent Stability for Replacing Current …
MH Rabbi, S Lee, D Sasaki, E Kawashima… - Small …, 2022 - Wiley Online Library
Highly ordered polycrystalline indium gallium oxide (PC‐IGO) film is obtained by the
crystallization of room temperature sputtered amorphous IGO on a hot plate at 350° C for 1 h …
crystallization of room temperature sputtered amorphous IGO on a hot plate at 350° C for 1 h …
High Performance Amorphous In0.5Ga0.5O Thin‐Film Transistor Embedded with Nanocrystalline In2O3 Dots for Flexible Display Application
High‐performance, coplanar amorphous In0. 5Ga0. 5O (a‐IGO) thin film transistor (TFT) on a
polyimide (PI) substrate deposited by spray pyrolysis (SP) is reported. The SP a‐IGO film …
polyimide (PI) substrate deposited by spray pyrolysis (SP) is reported. The SP a‐IGO film …
High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric With Ultralow Subthreshold Swing
We report a high-performance transparent amorphous indium gallium zinc oxide thin-film
transistor (a-IGZO TFT) gated by atomic layer deposition (ALD)-deposited HfAlO x. Through …
transistor (a-IGZO TFT) gated by atomic layer deposition (ALD)-deposited HfAlO x. Through …
Rational design of oxide heterostructure InGaZnO/TiO2 for high-performance thin-film transistors
A Abliz, P Nurmamat, D Wan - Applied Surface Science, 2023 - Elsevier
In this study, hetero-structured and self-passivated oxide thin film transistors (TFTs) were
fabricated, wherein the channel comprised a N 2 O plasma (a-IGZO: N 2 O) treated a-IGZO …
fabricated, wherein the channel comprised a N 2 O plasma (a-IGZO: N 2 O) treated a-IGZO …
Hydrogenation of Mg-doped InGaZnO thin-film transistors for enhanced electrical performance and stability
A Abliz - IEEE Transactions on Electron Devices, 2021 - ieeexplore.ieee.org
In this work, the hydrogenation (H) of Mg-doped amorphous InGaZnO (a-IGZO: Mg/H) thin-
film transistors (TFTs) was fabricated via RF sputtering method. As a consequence, the a …
film transistors (TFTs) was fabricated via RF sputtering method. As a consequence, the a …
Mechanism analysis of ultralow leakage and abnormal instability in InGaZnO thin-film transistor toward DRAM
G Yan, H Yang, W Liu, N Zhou, Y Hu… - … on Electron Devices, 2022 - ieeexplore.ieee.org
In this article, mechanisms of extremely low OFF-state current and abnormal negative bias
stress (NBS) are systematically investigated by the varying process that contains various gas …
stress (NBS) are systematically investigated by the varying process that contains various gas …
Indium–Gallium–Zinc Oxide (IGZO)-based ReRAM: Material Overview, Latest Development and Technology Perspective
A Datta, R Kishore, K Vishwakarma - 2023 - books.rsc.org
Thin film transistor (TFT) technology has progressed remarkably in the last decade. 1, 2
Active-matrix flat panel displays (AM-FPD) including LCD, 3 OLED, 4 and LED5, 6 depend …
Active-matrix flat panel displays (AM-FPD) including LCD, 3 OLED, 4 and LED5, 6 depend …
Improvement in short-channel effects of the thin-film transistors using atomic-layer deposited In–Ga–Sn–O channels with various channel compositions
SH Noh, HE Kim, JH Yang, YH Kim… - … on Electron Devices, 2022 - ieeexplore.ieee.org
In–Ga–Sn–O (IGTO) thin-film transistors (TFTs) were fabricated with channel lengths from to
500 nm to investigate the short-channel effects (SCEs), in which IGTO channel compositions …
500 nm to investigate the short-channel effects (SCEs), in which IGTO channel compositions …
Double-gate structure enabling remote Coulomb scattering-free transport in atomic-layer-deposited IGO thin-film transistors with HfO2 gate dielectric through insertion …
In this paper, high-performance indium gallium oxide (IGO) thin-film transistor (TFT) with a
double-gate (DG) structure was developed using an atomic layer deposition route. The …
double-gate (DG) structure was developed using an atomic layer deposition route. The …
A simple doping process achieved by modifying the passivation layer for self-aligned top-gate In-Ga-Zn-O thin-film transistors at 200 C
C Peng, H Huang, M Xu, L Chen, X Li, J Zhang - Nanomaterials, 2022 - mdpi.com
In this paper, a facile modifying technique of source/drain regions conductivity was proposed
for self-aligned top-gate In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) by controlling the …
for self-aligned top-gate In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) by controlling the …