Considerable efforts in search for an effective characterization technique for photovoltaic
devices with utmost precision is on the increase. For precise analysis and tailoring of device …

The benefits of the ultra-high concentration (> 1,000 suns) are shown in terms of cost
reduction, raw material availability and efficiency increase. The main challenges for the …

Background: ZnO nanostructures are promising candidates for the development of novel
electronic devices due to their unique electrical and optical properties. Here …

The role of antiphase domains formed on GaAs grown on Ge is analyzed by means of
conductive atomic force microscopy. The correlation of the derivative topography scans with …

Conductive atomic-force microscopy (C-AFM), where a conductive, biased probe is scanned
in contact mode across the surface under investigation is one of the most prominent …

The understanding of local charge trapping on the nanoscale is crucial for the design of
novel electronic devices and photodetectors based on SiGe nanoclusters (NCs). Here, the …

The present study covers the nanoanalysis methods for four key material characteristics:
electrical and electronic properties, optical, stress and strain, and chemical composition …

In this thesis dislocations, other crystal defects, and strain in compound heterostructures
were studied by means of synchrotron radiation X-ray topography and other X-ray methods …

Los nanohilos semiconductores son materiales básicos para el desarrollo de una nueva
electrónica flexible donde pueden funcionar como elementos activos o como conectores …

InGaP and GaAs layers have been grown over Ge: p substrate by MOVPE to obtain the
bottom cell of a triple junction solar cell. The diffusion of the group V atoms throughthe Ge is …