Porous 4H-SiC layers were prepared with a tailored sequence of metal assisted
photochemical etching (MAPCE) and photoelectrochemical etching (PECE) steps. Porous …

The preparation of SiC crystals doped with various impurities introduced during the process
of sublimation growth and diffusion is described. The growth of SiC crystals was carried out …

Novel method of boron diffusion at low temperatures between 1150 and 1300° C is used for
the formation of both p‐i SiC junction and i‐region in one technological process. As the …

Porous 4H-SiC layers were fabricated by photochemical etching of n-type 4H-SiC samples
with varying resistivity. An etching solution of Na 2 S 2 O 8 and HF was used while Pt …

Pin 4H‐SiC〈 Al〉 diode structures are fabricated by a new approach which is low
temperature diffusion of aluminium (Al) in SiC using flow of vacancy defects from surface into …

Optical absorption of pn-4H‐SiC structures doped with boron and aluminum by low‐
temperature diffusion was studied for the first time. Diffusion of impurities was performed …

In this paper, the electrophysical characteristics of the 4H-SiC pn junction created by low-
temperature diffusion of aluminum were studied. Current-voltage (IV) characteristics are …

Аннотация Исследовано влияние ионизованных примесей и микротрубок на
напряжение обратного пробоя pn-перехода на основе 4Н-SiC, полученного методом …

A heat storage member including: a substrate containing a SiC sintered body as a principal
ingredient; a coating layer disposed at least to a part of surface of the substrate; and a heat …