Quantum engineering of transistors based on 2D materials heterostructures
Quantum engineering entails atom-by-atom design and fabrication of electronic devices.
This innovative technology that unifies materials science and device engineering has been …
This innovative technology that unifies materials science and device engineering has been …
Germanium CMOS potential from material and process perspectives: Be more positive about germanium
A Toriumi, T Nishimura - Japanese Journal of Applied Physics, 2017 - iopscience.iop.org
CMOS miniaturization is now approaching the sub-10 nm level, and further downscaling is
expected. This size scaling will end sooner or later, however, because the typical size is …
expected. This size scaling will end sooner or later, however, because the typical size is …
Two dimensional semiconducting materials for ultimately scaled transistors
Two dimensional (2D) semiconductors have been established as promising candidates to
break through the short channel effect that existed in Si metal-oxide-semiconductor field …
break through the short channel effect that existed in Si metal-oxide-semiconductor field …
Enabling energy efficiency and polarity control in germanium nanowire transistors by individually gated nanojunctions
Germanium is a promising material for future very large scale integration transistors, due to
its superior hole mobility. However, germanium-based devices typically suffer from high …
its superior hole mobility. However, germanium-based devices typically suffer from high …
Vertically stacked strained 3-GeSn-nanosheet pGAAFETs on Si using GeSn/Ge CVD epitaxial growth and the optimum selective channel release process
YS Huang, FL Lu, YJ Tsou, HY Ye… - IEEE Electron …, 2018 - ieeexplore.ieee.org
Fully compressively strained GeSn quantum-well channels sandwiched by Ge sacrificial
layers on 200-mm silicon-on-insulator (SOI) wafers are grown using chemical vapor …
layers on 200-mm silicon-on-insulator (SOI) wafers are grown using chemical vapor …
Comparative coherence between layered and traditional semiconductors: unique opportunities for heterogeneous integration
As Moore's law deteriorates, the research and development of new materials system are
crucial for transitioning into the post Moore era. Traditional semiconductor materials, such as …
crucial for transitioning into the post Moore era. Traditional semiconductor materials, such as …
Effective mobility enhancement through asymmetric strain channels on extremely thin body (100) GOI pMOSFETs
CT Chen, K Sumita, K Toprasertpong… - … on Electron Devices, 2021 - ieeexplore.ieee.org
The impact of asymmetric compressive strain on electrical properties of (100) Ge-on-
insulator (GOI) pMOSFFETs with body thickness () ranging from 10.6 to 3.0 nm thick is …
insulator (GOI) pMOSFFETs with body thickness () ranging from 10.6 to 3.0 nm thick is …
Fully depleted Ge CMOS devices and logic circuits on Si
We systematically studied Ge CMOS devices and logic circuits fabricated on a GeOI
substrate, with the novel recessed channel and source/drain structures. Various channel …
substrate, with the novel recessed channel and source/drain structures. Various channel …
Demonstration of Ge nanowire CMOS devices and circuits for ultimate scaling
In this paper, Ge nanowire (NW) CMOS devices and circuits are analyzed in detail. Various
experiment splits are studied, including device geometry parameters such as the channel …
experiment splits are studied, including device geometry parameters such as the channel …
Hole Mobility Boosters of (110)-Oriented Extremely Thin Body SiGe-on-Insulator (SGOI) pMOSFETs
CT Chen, X Han, K Sumita… - … on Electron Devices, 2023 - ieeexplore.ieee.org
The effectiveness of (110)-oriented substrates and strain modulation by using starting
substrates with thin SiGe and channel width narrowing on mobility enhancement in SiGe-on …
substrates with thin SiGe and channel width narrowing on mobility enhancement in SiGe-on …