The impact of characterization techniques on HgCdTe infrared detector technology
MB Reine, KR Maschhoff, SP Tobin… - Semiconductor …, 1993 - iopscience.iop.org
The authors review those characterization techniques that have played significant roles in
the development of HgCdTe infrared detector technology. They focus on the two specific …
the development of HgCdTe infrared detector technology. They focus on the two specific …
Numerical analysis of HgCdTe simultaneous two-color photovoltaic infrared detectors
E Bellotti, D D'Orsogna - IEEE Journal of Quantum Electronics, 2006 - ieeexplore.ieee.org
In this paper, we present a physics-based full three-dimensional (3-D) numerical simulation
of simultaneous two-color medium-wave infrared long-wave infrared (MWIR-LWIR) and …
of simultaneous two-color medium-wave infrared long-wave infrared (MWIR-LWIR) and …
Electrical and Optical Properties of γ-SnSe: A New Ultra-narrow Band Gap Material
We describe the unusual properties of γ-SnSe, a new orthorhombic binary phase in the tin
monoselenide system. This phase exhibits an ultranarrow band gap under standard …
monoselenide system. This phase exhibits an ultranarrow band gap under standard …
Numerical modeling of SRH and tunneling mechanisms in high-operating-temperature MWIR HgCdTe photodetectors
A combined experimental and numerical simulation study is presented on two sets of
nominally identical Hg _ 1-x Cd _ x Te Hg 1-x Cd x Te single-color back-illuminated …
nominally identical Hg _ 1-x Cd _ x Te Hg 1-x Cd x Te single-color back-illuminated …
Full-band Monte Carlo simulation of HgCdTe APDs
F Bertazzi, M Moresco, M Penna, M Goano… - Journal of Electronic …, 2010 - Springer
A full-band Monte Carlo model has been developed for understanding the carrier
multiplication process in HgCdTe infrared avalanche photodiodes. The proposed model is …
multiplication process in HgCdTe infrared avalanche photodiodes. The proposed model is …
Intrinsic carrier concentration of narrow‐gap mercury cadmium telluride based on the nonlinear temperature dependence of the band gap
JR Lowney, DG Seiler, CL Littler, IT Yoon - Journal of applied physics, 1992 - pubs.aip.org
The intrinsic carrier concentrations of narrow‐gap Hg1− x Cd x Te alloys have been
calculated as a function of temperature between 0 and 300 K for x values between 0.17 and …
calculated as a function of temperature between 0 and 300 K for x values between 0.17 and …
Numerical simulation of third-generation HgCdTe detector pixel arrays
J Schuster, B Pinkie, S Tobin, C Keasler… - IEEE Journal of …, 2013 - ieeexplore.ieee.org
In this paper, we present a physics-based full 3-D numerical simulation model of third-
generation infrared (IR) detector pixel arrays. The approach avoids geometrical …
generation infrared (IR) detector pixel arrays. The approach avoids geometrical …
Simulation of small-pitch HgCdTe photodetectors
Recent studies indicate as an important technological step the development of infrared
HgCdTe-based focal plane arrays (FPAs) with sub-wavelength pixel pitch, with the …
HgCdTe-based focal plane arrays (FPAs) with sub-wavelength pixel pitch, with the …
Overview of compositional measurement techniques for HgCdTe with emphasis on IR transmission, energy dispersive X-ray analysis and optical reflectance
SL Price, PR Boyd - Semiconductor Science and Technology, 1993 - iopscience.iop.org
Three techniques for determining the composition (x identical to mole fraction of CdTe) of Hg
1-x Cd x Te are reviewed. These three techniques are infrared transmission (often called …
1-x Cd x Te are reviewed. These three techniques are infrared transmission (often called …
Temperature dependence of band gaps in HgCdTe and other semiconductors
S Krishnamurthy, AB Chen, A Sher… - Journal of electronic …, 1995 - Springer
Band-edge shifts induced by the electron-phonon interaction are calculated for HgCdTe
alloys and various semiconductor compounds starting from accurate zero-temperature band …
alloys and various semiconductor compounds starting from accurate zero-temperature band …