[HTML][HTML] GaN power converter and high-side IC substrate issues on Si, pn junction, or SOI
The lateral GaN power semiconductor technology enables monolithic integration of
complete power converter topologies such as half-bridges, multi-phase and multi-level …
complete power converter topologies such as half-bridges, multi-phase and multi-level …
Very high frequency PWM buck converters using monolithic GaN half-bridge power stages with integrated gate drivers
Y Zhang, M Rodríguez… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
Integration is a key step in utilizing advances in GaN technologies and enabling efficient
switched-mode power conversion at very high frequencies (VHF). This paper addresses …
switched-mode power conversion at very high frequencies (VHF). This paper addresses …
A review of envelope tracking power supply for mobile communication systems
X Ruan, Y Wang, Q Jin - CPSS Transactions on Power …, 2017 - ieeexplore.ieee.org
In modern mobile communication systems, spectral efficient modulation formats have been
widely used, which results in the envelope of the radio frequency (RF) signal is variable and …
widely used, which results in the envelope of the radio frequency (RF) signal is variable and …
Demonstration of GaN integrated half-bridge with on-chip drivers on 200-mm engineered substrates
Co-integration of the key power stage, namely gate drivers and half-bridge in a single-die
solution, is a tremendous and inevitable challenge to realizing GaN power integrated circuits …
solution, is a tremendous and inevitable challenge to realizing GaN power integrated circuits …
On the role of power electronics in visible light communication
The continuous demand of increasing data rates provided by wireless communication
systems is contributing to saturating the RF spectrum. Visible light communication (VLC) …
systems is contributing to saturating the RF spectrum. Visible light communication (VLC) …
Reproducing single-carrier digital modulation schemes for VLC by controlling the first switching harmonic of the DC–DC power converter output voltage ripple
A dc-dc power converter based on a two-phase synchronous buck converter that reproduces
single-carrier digital modulation schemes by controlling the first switching harmonic of the …
single-carrier digital modulation schemes by controlling the first switching harmonic of the …
Envelope tracking GaN power supply for 4G cell phone base stations
This paper introduces an envelope tracking (ET) power supply for 4G cell phone base
stations using EPC eGaN® FETs. An analytical loss model is developed for design …
stations using EPC eGaN® FETs. An analytical loss model is developed for design …
Gallium-nitride-based submodule integrated converters for high-efficiency distributed maximum power point tracking PV applications
Distributed maximum power point tracking (MPPT) photovoltaic (PV) systems have drawn
increased attention since the inhomogeneous irradiance on PV modules can significantly …
increased attention since the inhomogeneous irradiance on PV modules can significantly …
Dynamic RON characterization technique for the evaluation of thermal and off-state voltage stress of GaN switches
T Cappello, A Santarelli… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
GaN power switches provide remarkable performance in terms of power-density, reduced
parasitics, and high-thermal handling capability that enable the realization of very efficient …
parasitics, and high-thermal handling capability that enable the realization of very efficient …
Hard-switching 650-V GaN HEMTs in an 800-V DC-grid system with no-diode-clamping active-balancing three-level topology
For any voltage above 600-V dc, it is usually recommended to use 900-1200-V SiC
MOSFETs instead of GaN high-electron-mobility transistors (HEMTs), given presently …
MOSFETs instead of GaN high-electron-mobility transistors (HEMTs), given presently …