Interaction potentials for modelling GaN precipitation and solid state polymorphism

T Wonglakhon, D Zahn - Journal of Physics: Condensed Matter, 2020 - iopscience.iop.org
We outline a molecular mechanics model for the interaction of gallium and nitride ions
ranging from small complexes to nanoparticles and bulk crystals. While the current GaN …

H/D exchange in N-heterocycles catalysed by an NHC-supported ruthenium complex

VH Mai, OB Gadzhiev, SK Ignatov… - Catalysis Science & …, 2019 - pubs.rsc.org
NHC-supported trihydrides Cp (NHC) RuH3 show excellent catalytic activity in the H/D
exchange of pyridine and some other N-heterocycles under mild conditions and low catalyst …

FTIR exhaust gas analysis of GaN pseudo-halide vapor phase growth

K Kachel, D Siche, S Golka, P Sennikov… - Materials Chemistry and …, 2016 - Elsevier
FTIR exhaust gas analysis is used to establish chemical reactions paths in chemical vapor
growth of GaN single crystals. The growth process utilizes the classical Degussa process on …

Growth of bulk gan from gas phase

D Siche, R Zwierz - Crystal Research and Technology, 2018 - Wiley Online Library
The present status of the GaN bulk growth by vapor growth methods is reviewed and is
shortly classified into all methods with bulk growth potential. The hydride vapor phase …

[PDF][PDF] Analysis of vapor phase reaction by high-resolution mass spectrometry for Group III-Nitrides epitaxial growth

YE Zheng - nagoya.repo.nii.ac.jp
It is expected that energy consumption will continue to increase due to social development
and population growth. As shown in Fig. 1.1, electricity used in daily life is obtained by …