In recent years, several new applications of SiC (both 4H and 3C polytypes) have been
proposed in different papers. In this review, several of these emerging applications have …

Although silicon carbide (SiC) is widely regarded as the material of choice for power
electronics, the development of several new applications on the SiC material platform is …

The research and development of nanotechnology has led to materials science and
engineering entering the “nanomaterial era”. It is pivotal for analyzing the physicochemical …

1 Epigraphene : epitaxial graphene on silicon carbide 1. Introduction and overview Page 1 1
To be published in G. Chiarotti, P. Chiaradia (eds.): Physics of Solid Surfaces, Subvolume B …

The remarkable properties of graphene have shown promise for new perspectives in future
electronics, notably for nanometer scale devices. Here we grow graphene epitaxially on an …

Modifications of graphene's electronic band structure can be achieved through periodic
bending strain and related potential in samples grown on stepped substrates, opening a …

The spreading resistance of circular contacts with a radius in the range from 60 nm to 500
nm has been measured in highly oriented pyrolytic graphite which is known to exhibit an …

Nano-rippled graphene, a structurally modified graphene, presents a novel material with a
large range of possible applications including sensors, electrodes, coatings, optoelectronics …

In this report we investigate structural and electrical properties of epitaxial Chemical Vapor
Deposition quasi-free-standing graphene on an unintentionally-doped homoepitaxial layer …

In this paper, the structural and electronic properties of epitaxial graphene (EG) grown on 8°-
off 4H–SiC (0001) by high temperature thermal processes have been extensively …