A rigorous and consistent approach is demonstrated to develop a model of the 4M structure
(the four‐media structure of a film on a substrate of finite thickness). The general equations …

Thin films of (Ta 2 O 5) 0.85 (TiO 2) 0.15 were prepared on p-Si and quartz substrates by
reactive magnetron sputtering and the influence of substrate bias voltage (V b) on their …

Исследования проведены на слабо поглощающих пленках оксида тантала Ta 2 O 5,
кинетика кристаллизации которых характерна для аморфных пленок. Пленки …

Weakly absorbing films of tantalum oxide Ta 2 O 5 with the crystallization kinetics typical of
amorphous films have been investigated. The films have been prepared by reactive …

Из решения электродинамической граничной задачи получены аналитические
выражения для спектров отражения и пропускания тонкой пленки на поверхности …

Tantalum oxide (Ta2O5) is considered as the potential high-k candidate as an active
dielectric in storage capacitor of dynamic memories [1]. The doping of Ta2O5 with a small …

Thin films of (Ta2O5) 0.85 (TiO2) 0.15) were deposited on p-Si (100) by DC reactive
magnetron sputtering at various oxygen partial pressures in the range 3× 10− 2–9× 10− 2 …

The (x) Ta2O5 (1| x) Nb2O5 thin films were prepared on the Pt/Ti/SiO2/Si (100) substrate by
sol gel process and their dielectric and leakage current characteristics were investigated as …