Recent progress of indium-bearing group-III nitrides and devices: a review
Y He, L Li, J Xiao, L Liu, G Li, W Wang - Optical and Quantum Electronics, 2024 - Springer
During the past decades, group-III nitrides have emerged as a new impetus for the
development of semiconductor industry and attracted significant attentions in different fields …
development of semiconductor industry and attracted significant attentions in different fields …
Growth and characterization of AlInN/GaN superlattices
Data are presented on near-lattice-matched Al 1-x In x N/GaN superlattices (SLs) with
superior morphology to thick AlInN layers. The SLs are grown by metalorganic chemical …
superior morphology to thick AlInN layers. The SLs are grown by metalorganic chemical …
[HTML][HTML] Optical and structural characteristics of AlInN/GaN superlattices with varying AlInN fractions
Data on the growth and characterization of AlInN/GaN superlattices (SLs) with varying AlInN
fractions are presented. The SLs are grown using metal–organic chemical vapor deposition …
fractions are presented. The SLs are grown using metal–organic chemical vapor deposition …
Composition, temperature, and size regulation of refractive index in ternary group-Ⅲ nitride alloys: a bond relaxation investigation
J Liu, M Zhu, X Yang, L Yang - Journal of Physics D: Applied …, 2024 - iopscience.iop.org
The physical origins of composition-, temperature-, and size-motivated changes in refractive
index in crystals have long been a puzzle. Combining the bond-order-length-strength theory …
index in crystals have long been a puzzle. Combining the bond-order-length-strength theory …