On-chip infrared photonics with Si-Ge-heterostructures: What is next?
The integration of Ge on Si for photonics applications has reached a high level of maturity:
Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge …
Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge …
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions
n-type Ge/SiGe terahertz quantum cascade lasers are investigated using non-equilibrium
Green's functions calculations. We compare the temperature dependence of the terahertz …
Green's functions calculations. We compare the temperature dependence of the terahertz …
Three-dimensional reconstruction of interface roughness and alloy disorder in Ge/GeSi asymmetric coupled quantum wells using electron tomography
E Paysen, G Capellini, E Talamas Simola… - … Applied Materials & …, 2024 - ACS Publications
Interfaces play an essential role in the performance of ever-shrinking semiconductor
devices, making comprehensive determination of their three-dimensional (3D) structural …
devices, making comprehensive determination of their three-dimensional (3D) structural …
High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THz
E Campagna, E Talamas Simola, T Venanzi… - …, 2024 - degruyter.com
A parabolic potential that confines charge carriers along the growth direction of quantum
wells semiconductor systems is characterized by a single resonance frequency, associated …
wells semiconductor systems is characterized by a single resonance frequency, associated …
Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interfacial …
In this manuscript, we develop a generalized theory for the scattering process produced by
interface roughness on charge carriers that is suitable for any semiconductor …
interface roughness on charge carriers that is suitable for any semiconductor …
Second harmonic generation in germanium quantum wells for nonlinear silicon photonics
Second-harmonic generation (SHG) is a direct measure of the strength of second-order
nonlinear optical effects, which also include frequency mixing and parametric oscillations …
nonlinear optical effects, which also include frequency mixing and parametric oscillations …
[HTML][HTML] Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si (001)
H Tetzner, W Seifert, O Skibitzki, Y Yamamoto… - Applied Physics …, 2023 - pubs.aip.org
In this work, we investigate the effective background charge density in intrinsic Si 0.06 Ge
0.94/Ge plastically relaxed heterostructures deposited on Si (001). Hall effect measurements …
0.94/Ge plastically relaxed heterostructures deposited on Si (001). Hall effect measurements …
Asymmetric-coupled Ge/SiGe quantum wells for second harmonic generation at 7.1 THz in integrated waveguides: a theoretical study
E Talamas Simola, M Ortolani, L Di Gaspare… - …, 2024 - degruyter.com
We present a theoretical investigation of guided second harmonic generation at THz
frequencies in SiGe waveguides embedding n-type Ge/SiGe asymmetric coupled quantum …
frequencies in SiGe waveguides embedding n-type Ge/SiGe asymmetric coupled quantum …
[HTML][HTML] THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures
We report electroluminescence originating from L-valley transitions in n-type Ge/Si 0.15 Ge
0.85 quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of Δ …
0.85 quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of Δ …
THz intersubband absorption in n-type Si1− xGex parabolic quantum wells
High-quality n-type continuously graded Ge-rich Si 1− x Ge x parabolic quantum wells with
different doping levels were grown by using ultrahigh-vacuum chemical vapor deposition on …
different doping levels were grown by using ultrahigh-vacuum chemical vapor deposition on …