Silicon carbide converters and MEMS devices for high-temperature power electronics: A critical review

X Guo, Q Xun, Z Li, S Du - Micromachines, 2019 - mdpi.com
The significant advance of power electronics in today's market is calling for high-
performance power conversion systems and MEMS devices that can operate reliably in …

Cascode GaN/SiC: A wide-bandgap heterogenous power device for high-frequency applications

J Xu, L Gu, Z Ye, S Kargarrazi… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
Wireless power transfer systems and plasma generators are among the increasing number
of applications that use high-frequency power converters. Increasing switching frequency …

An integrated SiC CMOS gate driver for power module integration

M Barlow, S Ahmed, AM Francis… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
With high-temperature power devices available, the support circuitry required for efficient
operation, such as a gate driver, is needed as part of a complete high-temperature solution …

Stable operation of AlGaN/GaN HEMTs for 25 h at 400° C in air

S Kargarrazi, AS Yalamarthy… - IEEE Journal of the …, 2019 - ieeexplore.ieee.org
Extreme environments such as the Venus atmosphere are among the emerging applications
that demand electronics that can withstand high-temperature oxidizing conditions. While …

Bipolar integrated circuits in SiC for extreme environment operation

CM Zetterling, A Hallén, R Hedayati… - Semiconductor …, 2017 - iopscience.iop.org
Silicon carbide (SiC) integrated circuits have been suggested for extreme environment
operation. The challenge of a new technology is to develop process flow, circuit models and …

An integrated SiC CMOS gate driver

M Barlow, S Ahmed, HA Mantooth… - 2016 IEEE Applied …, 2016 - ieeexplore.ieee.org
In this work, the first reported integrated silicon carbide (SiC) CMOS gate driver is presented.
The gate driver is designed in a 15V, 1.2 μm silicon carbide CMOS process, and simulated …

500° C high current 4H-SiC lateral BJTs for high-temperature integrated circuits

H Elahipanah, S Kargarrazi, A Salemi… - IEEE Electron …, 2017 - ieeexplore.ieee.org
High-current 4H-SiC lateral BJTs for high-temperature monolithic integrated circuits are
fabricated. The BJTs have three different sizes and the designs are optimized in terms of …

500° C, high current linear voltage regulator in 4H-SiC BJT technology

S Kargarrazi, H Elahipanah… - IEEE Electron …, 2018 - ieeexplore.ieee.org
This letter reports on a fully integrated 2-A linear voltage regulator operational in a wide
temperature range from 25° C up to 500° C fabricated in 4H-SiC technology. The circuit …

Extended high-temperature operation of silicon carbide CMOS circuits for Venus surface application

J Holmes, AM Francis, I Getreu… - Journal of …, 2016 - meridian.allenpress.com
In the last decade, significant effort has been expended toward the development of reliable,
high-temperature integrated circuits. Designs based on a variety of active semiconductor …

A study on positive-feedback configuration of a bipolar SiC high temperature operational amplifier

S Kargarrazi, L Lanni, CM Zetterling - Solid-State Electronics, 2016 - Elsevier
This paper reports on the design and implementation of an integrated operational amplifier
in bipolar SiC, and elaborates on its operation in positive-feedback configuration. The …