Wireless power transfer systems and plasma generators are among the increasing number of applications that use high-frequency power converters. Increasing switching frequency …
M Barlow, S Ahmed, AM Francis… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
With high-temperature power devices available, the support circuitry required for efficient operation, such as a gate driver, is needed as part of a complete high-temperature solution …
Extreme environments such as the Venus atmosphere are among the emerging applications that demand electronics that can withstand high-temperature oxidizing conditions. While …
Silicon carbide (SiC) integrated circuits have been suggested for extreme environment operation. The challenge of a new technology is to develop process flow, circuit models and …
M Barlow, S Ahmed, HA Mantooth… - 2016 IEEE Applied …, 2016 - ieeexplore.ieee.org
In this work, the first reported integrated silicon carbide (SiC) CMOS gate driver is presented. The gate driver is designed in a 15V, 1.2 μm silicon carbide CMOS process, and simulated …
H Elahipanah, S Kargarrazi, A Salemi… - IEEE Electron …, 2017 - ieeexplore.ieee.org
High-current 4H-SiC lateral BJTs for high-temperature monolithic integrated circuits are fabricated. The BJTs have three different sizes and the designs are optimized in terms of …
S Kargarrazi, H Elahipanah… - IEEE Electron …, 2018 - ieeexplore.ieee.org
This letter reports on a fully integrated 2-A linear voltage regulator operational in a wide temperature range from 25° C up to 500° C fabricated in 4H-SiC technology. The circuit …
J Holmes, AM Francis, I Getreu… - Journal of …, 2016 - meridian.allenpress.com
In the last decade, significant effort has been expended toward the development of reliable, high-temperature integrated circuits. Designs based on a variety of active semiconductor …
This paper reports on the design and implementation of an integrated operational amplifier in bipolar SiC, and elaborates on its operation in positive-feedback configuration. The …