Design and modeling of InGaAs/GaAsSb nanoscale heterostructure for application of optical fiber communication system

J Vijay, R krishan Yadav, PA Alvi, K Singh… - Materials Today …, 2020 - Elsevier
In this paper, we have designed and theoretically analyzed InGaAs/GaAsSb nanoscale
heterostructure, where InGaAs is quantum well material and GaAsSb is the barrier material …

Nanoscale Heterostructure Concept and III-Sb Element Based Heterostructures for Infrared Applications: A Review

P Chaudhary, A Rathi - Nanoscience and Technology: An …, 2024 - dl.begellhouse.com
Heterostructures have a high potential for infrared radiation applications in the present
scenario. The infrared (IR) region, particularly ranging from 760 nm to 1 million nm, is …

Effect of Quantum Well Width on Optical Gain in Type-II GAP/GAPSB/GAASSB Nanoscale Heterostructure for IR Optoelectronics

P Chaudhary, A Rathi - … Conference on Emerging Applications of Material …, 2024 - Springer
III-V semiconductor compound-based W-shaped type-II GaP/GaP0. 5Sb0. 5/GaAs0. 16Sb0.
84 nanoscale heterostructure is investigated under different well widths at 300 K. The optical …

Investigation of high optical gain in type-I AlSb/InGaAsSb/AlSb nano-scale heterostructure for NIR applications

M Riyaj, A Rathi, P Pushpalata, S Kumar… - AIP Conference …, 2022 - pubs.aip.org
The paper deals with the effects of well width deviation on optical gain and Optical
properties of Gallium Antimony based type-I AlSb/InGaAsSb/AlSb nano-scale …

Wavefunctions and Optical Gain in In0.24Ga0.76N/GaN Type-I Nano-heterostructure Under External Uniaxial Strain

M Riyaj, AK Singh, PA Alvi, A Rathi - Intelligent Computing Techniques for …, 2019 - Springer
Wavefunctions and optical gain in a single In 0.24 Ga 0.76 N quantum well sandwiched
between the GaN barriers has been reported. Optical gain within x-polarization and z …