Convertible stem/fracture stem

P Deransart, CAK Fleury, V Gaborit, P Boileau… - US Patent …, 2019 - Google Patents
A modular shoulder prosthesis is provided. The modular prosthesis includes a stem, an
anatomic insert, and a reverse insert. The stem is a unitary body that includes a distal shaft …

Semiconductor devices including field effect transistors and methods of forming the same

M Cantoro, Z Wu, K Bhuwalka, S Kim… - US Patent …, 2017 - Google Patents
(57) ABSTRACT A semiconductor device includes an active pattern provided on a Substrate
and a gate electrode crossing over the active pattern. The active pattern includes a first …

Logic circuit

J Koyama, K Akimoto, M Tsubuku - US Patent 9,083,334, 2015 - Google Patents
An object is to apply a transistor using an oxide semiconduc torto a logic circuit including an
enhancement transistor. The logic circuit includes a depletion transistor 101 and an …

Method of making a dual-gate HEMT

DF Brown, JS Moon, Y Tang - US Patent 10,734,498, 2020 - Google Patents
A four-terminal GaN transistor and methods of manufacture, the transistor having source and
drain regions and preferably two T-shaped gate electrodes, wherein a stem of one of the two …

Highly scaled linear GaN HEMT Structures

JS Moon, A Corrion, JC Wong, AJ Williams - US Patent 10,714,605, 2020 - Google Patents
A transistor includes a substrate, a channel layer coupled to the substrate, a source
electrode coupled to the channel layer, a drain electrode coupled to the channel layer, and a …

Semiconductor devices including field effect transistors and methods of forming the same

M Cantoro, Z Wu, K Bhuwalka, S Kim… - US Patent …, 2019 - Google Patents
(74) Attorney, Agent, or Firm—Onello & Mello, LLP (57) ABSTRACT A semiconductor device
includes an active pattern provided on a substrate and a gate electrode crossing over the …

Semiconductor device and method of manufacturing same

Y Fujino - US Patent 11,081,355, 2021 - Google Patents
(57) ABSTRACT A semiconductor device includes a semiconductor part; first and second
electrodes, the semiconductor part being pro vided between the first and second electrodes; …

Field effect transistor

WT Wohlmuth - US Patent 11,876,128, 2024 - Google Patents
A field effect transistor comprising: a first semiconductor structure, the first semiconductor
structure having a channel layer; a second semiconductor structure, the second …

Semiconductor device and method of manufacturing same

Y Fujino - US Patent 11,705,334, 2023 - Google Patents
A semiconductor device includes a semiconductor part; first and second electrodes, the
semiconductor part being provided between the first and second electrodes; a control …

Binary III-nitride 3DEG heterostructure HEMT with graded channel for high linearity and high power applications

JS Moon, F Arkun - US Patent 11,404,541, 2022 - Google Patents
A HEMT comprising: a substrate; a channel layer coupled to the substrate; a source
electrode coupled to the channel layer; a drain electrode coupled to the channel layer; and a …