Transistors based on two-dimensional materials for future integrated circuits

S Das, A Sebastian, E Pop, CJ McClellan… - Nature …, 2021 - nature.com
Field-effect transistors based on two-dimensional (2D) materials have the potential to be
used in very large-scale integration (VLSI) technology, but whether they can be used at the …

Printed transistors made of 2D material-based inks

S Conti, G Calabrese, K Parvez, L Pimpolari… - Nature Reviews …, 2023 - nature.com
Large-area electronics for the Internet of Things requires a new generation of light-weight,
flexible, low-power electronics, based on advanced materials able to provide high …

Insulators for 2D nanoelectronics: the gap to bridge

YY Illarionov, T Knobloch, M Jech, M Lanza… - Nature …, 2020 - nature.com
Nanoelectronic devices based on 2D materials are far from delivering their full theoretical
performance potential due to the lack of scalable insulators. Amorphous oxides that work …

MoS2-Based Optoelectronic Gas Sensor with Sub-parts-per-billion Limit of NO2 Gas Detection

T Pham, G Li, E Bekyarova, ME Itkis, A Mulchandani - ACS nano, 2019 - ACS Publications
Red light illumination with photon energy matching the direct band gap of chemical vapor
deposition grown single-layer MoS2 with Au metal electrodes was used to induce a …

Electrical characterization of 2D materials-based field-effect transistors

SB Mitta, MS Choi, A Nipane, F Ali, C Kim… - 2D …, 2020 - iopscience.iop.org
Abstract Two-dimensional (2D) materials hold great promise for future nanoelectronics as
conventional semiconductor technologies face serious limitations in performance and power …

A wafer-scale van der Waals dielectric made from an inorganic molecular crystal film

K Liu, B Jin, W Han, X Chen, P Gong, L Huang… - Nature …, 2021 - nature.com
Van der Waals dielectrics, such as hexagonal boron nitride, are widely used to preserve the
intrinsic properties of two-dimensional semiconductors in electronic devices. However …

Plasma processing and treatment of 2D transition metal dichalcogenides: tuning properties and defect engineering

S Sovizi, S Angizi, SA Ahmad Alem, R Goodarzi… - Chemical …, 2023 - ACS Publications
Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for
fundamental nanoscale science and various technological applications. They are a …

Reservoir Computing with Charge‐Trap Memory Based on a MoS2 Channel for Neuromorphic Engineering

M Farronato, P Mannocci, M Melegari… - Advanced …, 2023 - Wiley Online Library
Novel memory devices are essential for developing low power, fast, and accurate in‐
memory computing and neuromorphic engineering concepts that can compete with the …

Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors

YY Illarionov, AG Banshchikov, DK Polyushkin… - Nature …, 2019 - nature.com
Two-dimensional semiconductors could be used to fabricate ultimately scaled field-effect
transistors and more-than-Moore nanoelectronic devices. However, these targets cannot be …

Hysteresis in the transfer characteristics of MoS2 transistors

A Di Bartolomeo, L Genovese, F Giubileo, L Iemmo… - 2D …, 2017 - iopscience.iop.org
We investigate the origin of the hysteresis observed in the transfer characteristics of back-
gated field-effect transistors with an exfoliated MoS 2 channel. We find that the hysteresis is …