Large-area electronics for the Internet of Things requires a new generation of light-weight, flexible, low-power electronics, based on advanced materials able to provide high …
Nanoelectronic devices based on 2D materials are far from delivering their full theoretical performance potential due to the lack of scalable insulators. Amorphous oxides that work …
Red light illumination with photon energy matching the direct band gap of chemical vapor deposition grown single-layer MoS2 with Au metal electrodes was used to induce a …
Abstract Two-dimensional (2D) materials hold great promise for future nanoelectronics as conventional semiconductor technologies face serious limitations in performance and power …
Van der Waals dielectrics, such as hexagonal boron nitride, are widely used to preserve the intrinsic properties of two-dimensional semiconductors in electronic devices. However …
Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for fundamental nanoscale science and various technological applications. They are a …
Novel memory devices are essential for developing low power, fast, and accurate in‐ memory computing and neuromorphic engineering concepts that can compete with the …
Two-dimensional semiconductors could be used to fabricate ultimately scaled field-effect transistors and more-than-Moore nanoelectronic devices. However, these targets cannot be …
We investigate the origin of the hysteresis observed in the transfer characteristics of back- gated field-effect transistors with an exfoliated MoS 2 channel. We find that the hysteresis is …