Full-color single nanowire pixels for projection displays
Multicolor single InGaN/GaN dot-in-nanowire light emitting diodes (LEDs) were fabricated
on the same substrate using selective area epitaxy. It is observed that the structural and …
on the same substrate using selective area epitaxy. It is observed that the structural and …
Electrically driven, phosphor-free, white light-emitting diodes using gallium nitride-based double concentric truncated pyramid structures
White light-emitting diodes (LEDs) are becoming an alternative general light source, with
huge energy savings compared to conventional lighting. However, white LEDs using …
huge energy savings compared to conventional lighting. However, white LEDs using …
A brief review of formation energies calculation of surfaces and edges in semiconductors
To have a high quality experimental growth of crystals, understanding the equilibrium crystal
shape (ECS) in different thermodynamic growth conditions is important. The factor governing …
shape (ECS) in different thermodynamic growth conditions is important. The factor governing …
New approaches for calculating absolute surface energies of wurtzite (0001)/(0001): A study of ZnO and GaN
The accurate absolute surface energies of (0001)/(000 1) surfaces of wurtzite structures
are crucial in determining the thin film growth mode of important energy materials. However …
are crucial in determining the thin film growth mode of important energy materials. However …
Correlation between the Surface Undulation and Luminescence Characteristics in Semi-Polar 11 2¯ 2 InGaN/GaN Multi-Quantum Wells
MH Sheen, YH Lee, J Jang, J Baek, O Nam, CW Yang… - Nanomaterials, 2023 - mdpi.com
Surface undulation was formed while growing InGaN/GaN multi-quantum wells on a semi-
polar m-plane (1–100) sapphire substrate. Two distinct facets, parallel to 11 2¯ 2 and 01 1¯ …
polar m-plane (1–100) sapphire substrate. Two distinct facets, parallel to 11 2¯ 2 and 01 1¯ …
Green Electroluminescence from Radial m-Plane InGaN Quantum Wells Grown on GaN Wire Sidewalls by Metal–Organic Vapor Phase Epitaxy
We demonstrate green emission from InGaN/GaN multiple quantum wells (MQWs) grown on
m-plane sidewalls of GaN wires. To tune the emission wavelength, InGaN radial wells were …
m-plane sidewalls of GaN wires. To tune the emission wavelength, InGaN radial wells were …
Understanding the p-type GaN nanocrystals on InGaN nanowire heterostructures
The efficiency of semiconductor light-emitting diodes (LEDs) has been largely limited by the
extremely inefficient p-type conduction on InGaN heterostructures. Here we report highly …
extremely inefficient p-type conduction on InGaN heterostructures. Here we report highly …
Red emission of InGaN/GaN double heterostructures on GaN nanopyramid structures
We fabricated InGaN double-hetero structure (DHS) on the nanosized pyramid structure and
successfully demonstrated efficient red color emission at 650 nm from this unique structure …
successfully demonstrated efficient red color emission at 650 nm from this unique structure …
Modeling a MMI Green Light Power Splitter Based on Gallium-Nitride Slot Waveguide Structure
L Nikolaevsky, T Shchori… - IEEE Photonics …, 2018 - ieeexplore.ieee.org
The advance progress of the visible light communication field requires new and powerful
components that enable high speed light transmission with low losses. Therefore, we …
components that enable high speed light transmission with low losses. Therefore, we …
Monolithic semi-polar () InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate
The epitaxial growth of novel GaN-based light-emitting diode (LED) on Si (100) substrate
has proved challenging. Here in this work, we investigate a monolithic phosphor-free semi …
has proved challenging. Here in this work, we investigate a monolithic phosphor-free semi …