Polymers undergoing controlled degradation are of significant current interest. Among the
classes of degradable polymers, self-immolative polymers (SIPs) are attracting increasing …

The resolution, line edge roughness, and sensitivity (RLS) trade-off has fundamentally
limited the lithographic performance of chemically amplified resists. Production of next …

The semiconductor industry has long been driven by advances in a nanofabrication
technology known as lithography, and the fabrication of nanostructures on chips relies on an …

This work advances a computational framework to probe the molecular inhomogeneities that
occur in chemically amplified photoresists intended for ultraviolet (EUV) lithography …

Continuing extreme downscaling of semiconductor devices, essential for high performance
and energy efficiency of future microelectronics, hinges on extreme ultraviolet lithography …

Conventional chemically amplified resists (CARs) rely on the usage of photoacid generators
to serve as the source of chemical amplification. However, acid diffusion inevitably …

In this paper, a chemically amplified (CA) i-line photoresist system is described including a
phenolic resin modified with glycidyl methacrylate (GMA) addition and protected with di-tert …

We demonstrate an understanding of different physicochemical properties of copolymers
induced by systematic changes in their structural parameters, ie, the chemical structure of …

Abstract In this paper, 4, 5-dimethoxy-2-nitrobenzyl methacrylate (MONMA) was
copolymerized with 2-hydroxyethyl methacrylate (HEMA) and tert-butyl methacrylate (TBMA) …

Photoacid generators (PAGs) are important components of chemically amplified resists. The
properties of PAGs directly affect the sensitivity of photoresists, line edge roughness, and …