A major challenge for the continued downscaling of integrated circuits is the resistivity
increase of Cu interconnect lines with decreasing dimensions. Alternative metals have the …

The resistivity of nanoscale metallic conductors is orientation dependent, even if the bulk
resistivity is isotropic and electron scattering cross-sections are independent of momentum …

The resistivity size effect in Ir is quantified with in situ and ex situ transport measurements at
295 and 77 K using epitaxial layers with thickness d= 5–140 nm deposited on MgO (001) …

Mo (001) and Mo (011) layers with thickness d= 4–400 nm are sputter-deposited onto MgO
(001) and α-Al2O3 (11 2¯ 0) substrates and their resistivity is measured in situ and ex situ at …

Experimentally measured resistivity of Co (0001) and Ru (0001) single crystal thin films,
grown on c-plane sapphire substrates, as a function of thickness is modeled using the …

In situ and ex situ transport measurements on epitaxial Co (0001)/Al 2 O 3 (0001) layers with
thickness d= 7–300 nm are used to quantify the resistivity ρ scaling due to electron surface …

The resistivity size effect in the ordered intermetallic CuTi compound is quantified using in
situ and ex situ thin film resistivity ρ measurements at 295 and 77 K, and density functional …

In this work, the deposition of tungsten (W) films by High Power Impulse Magnetron
Sputtering (HiPIMS) has been investigated. By adopting a combined modeling and …

The effect of the surface roughness on the electrical resistivity of metallic thin films is
described by electron reflection at discrete step edges. A Landauer formalism for incoherent …

In situ transport measurements on 10-nm-thick epitaxial Cu (001), Co (001), and Rh (001)
layers exhibit a characteristic increase in the sheet resistance ΔR s/R o= 43%, 10%, and 4 …