DC and RF/analog performances of split source horizontal pocket and hetero stack TFETs considering interface trap charges: a simulation study
This work investigates the impact of different types of interface trap charges (ITCs) on
electrical parameters of split source horizontal pocket Z shape TFET (ZHP-TFET) and Hetero …
electrical parameters of split source horizontal pocket Z shape TFET (ZHP-TFET) and Hetero …
Analysis on electrical parameters including temperature and interface trap charges in gate overlap Ge source step shape double gate TFET
In this paper, the electrical parameters are evaluated for the variations of temperature in
Gate Overlap Ge source Step Shape Double Gate TFET (GO-Ge-SSDG-TFET) under the …
Gate Overlap Ge source Step Shape Double Gate TFET (GO-Ge-SSDG-TFET) under the …
Simulation study of n+ pocket step shape heterodielectric double gate tunnel FET for switching and biosensing applications
In this article, an n+ pocket step shape heterodielectric double gate Tunnel TFET (SSHDDG-
TFET) is designed for high frequency and biosensing applications. A calibration of TCAD …
TFET) is designed for high frequency and biosensing applications. A calibration of TCAD …
[HTML][HTML] Impact on DC and analog/RF performances of SOI based GaN FinFET considering high-k gate oxide
This paper suggests an analysis of SOI-based GaN FinFET that considers high-k gate oxide
into account. The effect of using SOI substrate and a high-k dielectric layer on ON current …
into account. The effect of using SOI substrate and a high-k dielectric layer on ON current …
Low-bandgap Material Engineering based TFET device for Next-Generation Biosensor Application-A Comprehensive review on Device structure and Sensitivity.
Abstract The Tunnel Field Effect Transistor (TFET) device has emerged as the potential
candidate to replace the Field Effect Transistor (FET)--based biosensor for the label-free …
candidate to replace the Field Effect Transistor (FET)--based biosensor for the label-free …
Investigation on electrical parameters between single and double material gate nanoribbon FETs including trap distributions
The presence of multiple interface of gate-oxide and semiconductor in Nano-ribbon FET (NR-
FET) causes several defects and leads to the degraded electrical parameters. In this regard …
FET) causes several defects and leads to the degraded electrical parameters. In this regard …
Improving the efficiency of ZnO/WS2/CZTS1 solar cells using CZTS2 as BSF layer by SCAPS-1D numerical simulation
With a high absorption coefficient and tunable bandgap CZTS (Copper Zinc Tin Sulfide)
makes it suitable for photovoltaic applications. Present paper deals with the simulation and …
makes it suitable for photovoltaic applications. Present paper deals with the simulation and …
Sensitivity analysis of TMD TFET based photo-sensor for visible light detection: A simulation study
This paper reports the sensitivity analysis of double gate TFET using the Transition Metal Di
chalcogenide (TMD) material in photo sensitive region with the help of technology computer …
chalcogenide (TMD) material in photo sensitive region with the help of technology computer …
Sensitivity analysis of Horizontal pocket N-TFET based biosensor considering repulsive steric effects
In this paper, sensitivity analysis of Tunnel Field Effect Transistor (TFET) based label free
Biosensor has been countered considering the repulsive steric effect (RSE). Horizontal …
Biosensor has been countered considering the repulsive steric effect (RSE). Horizontal …
Optical performance of split-source z-shaped horizontal-pocket and hetero-stacked tfet-based photosensors
This paper compares the optical performance of a split-source horizontal-pocket Z-shaped
tunnel field-effect transistor (ZHP-TFET) and hetero-stacked TFET (HS-TFET) using a …
tunnel field-effect transistor (ZHP-TFET) and hetero-stacked TFET (HS-TFET) using a …