Abrupt Transition from Ferromagnetic to Antiferromagnetic of Interfacial Exchange in Perpendicularly Magnetized -MnGa/FeCo Tuned by Fermi Level Position

QL Ma, S Mizukami, T Kubota, XM Zhang, Y Ando… - Physical Review Letters, 2014 - APS
An abrupt transition of the interfacial exchange coupling from ferromagnetic to
antiferromagnetic was observed in the interface of perpendicularly magnetized L 1 0 …

Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first …

K Masuda, H Itoh, Y Sonobe, H Sukegawa, S Mitani… - Physical Review B, 2021 - APS
We study the tunnel magnetoresistance (TMR) effect and magnetocrystalline anisotropy in a
series of magnetic tunnel junctions (MTJs) with L 1 1-ordered fcc ferromagnetic alloys and …

Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions

DL Zhang, C Sun, Y Lv, KB Schliep, Z Zhao, JY Chen… - Physical Review …, 2018 - APS
Magnetic materials that possess large bulk perpendicular magnetic anisotropy (PMA) are
essential for the development of magnetic tunnel junctions (MTJs) used in future spintronic …

Perpendicular magnetic tunnel junction and its application in magnetic random access memory

HF Liu, SS Ali, XF Han - Chinese Physics B, 2014 - iopscience.iop.org
Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy
(PMA) are reviewed and summarized. At first, the concept and source of perpendicular …

Perpendicular magnetic tunnel junctions with Mn-modified ultrathin MnGa layer

KZ Suzuki, Y Miura, R Ranjbar, L Bainsla… - Applied Physics …, 2018 - pubs.aip.org
Perpendicular magnetic tunnel junctions (p-MTJs) with a MgO barrier and a 1-nm-thick
MnGa electrode were investigated by inserting several monolayers (MLs) of Mn. The tunnel …

Tetragonal Heusler-Like Mn–Ga Alloys Based Perpendicular Magnetic Tunnel Junctions

Q Ma, A Sugihara, K Suzuki, X Zhang, T Miyazaki… - Spin, 2014 - World Scientific
Films of the Mn-based tetragonal Heusler-like alloys, such as Mn–Ga, exhibit a large
perpendicular magnetic anisotropy (PMA), small damping constant, small saturation …

[HTML][HTML] Perpendicular magnetic tunnel junctions with multi-interface free layer

P Khanal, B Zhou, M Andrade, Y Dang… - Applied Physics …, 2021 - pubs.aip.org
Future generations of magnetic random access memory demand magnetic tunnel junctions
that can provide simultaneously high magnetoresistance, strong retention, low switching …

Magnetic proximity, magnetoresistance and spin filtering effect in a binuclear ferric phthalocyanine from first principles

X Liu, T Wang, L Niu, Y Wang, Q Zhang… - Journal of Physics D …, 2019 - iopscience.iop.org
Using density functional theory (DFT) within the non-equilibrium Green's function (NEGF)
formalism, we studied the spin transport through a binuclear ferric phthalocyanine (Fe 2 Pc …

Variable substrate temperature deposition of CoFeB film on Ta for manipulating the perpendicular coercive forces

S Lakshmanan, SK Rao, MR Muthuvel… - Journal of Magnetism …, 2017 - Elsevier
Abstract Magnetization of Ta/CoFeB/Ta trilayer films with thick layer of CoFeB deposited
under different substrate temperatures (T s) via ultra-high vacuum DC sputtering technique …

Breakdown of shape memory effect in bent Cu–Al–Ni nanopillars: when twin boundaries become stacking faults

L Liu, X Ding, J Sun, S Li, EKH Salje - Nano Letters, 2016 - ACS Publications
Bent Cu–Al–Ni nanopillars (diameters 90–750 nm) show a shape memory effect, SME, for
diameters D> 300 nm. The SME and the associated twinning are located in a small …