We study the tunnel magnetoresistance (TMR) effect and magnetocrystalline anisotropy in a series of magnetic tunnel junctions (MTJs) with L 1 1-ordered fcc ferromagnetic alloys and …
Magnetic materials that possess large bulk perpendicular magnetic anisotropy (PMA) are essential for the development of magnetic tunnel junctions (MTJs) used in future spintronic …
Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy (PMA) are reviewed and summarized. At first, the concept and source of perpendicular …
Perpendicular magnetic tunnel junctions (p-MTJs) with a MgO barrier and a 1-nm-thick MnGa electrode were investigated by inserting several monolayers (MLs) of Mn. The tunnel …
Q Ma, A Sugihara, K Suzuki, X Zhang, T Miyazaki… - Spin, 2014 - World Scientific
Films of the Mn-based tetragonal Heusler-like alloys, such as Mn–Ga, exhibit a large perpendicular magnetic anisotropy (PMA), small damping constant, small saturation …
P Khanal, B Zhou, M Andrade, Y Dang… - Applied Physics …, 2021 - pubs.aip.org
Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching …
X Liu, T Wang, L Niu, Y Wang, Q Zhang… - Journal of Physics D …, 2019 - iopscience.iop.org
Using density functional theory (DFT) within the non-equilibrium Green's function (NEGF) formalism, we studied the spin transport through a binuclear ferric phthalocyanine (Fe 2 Pc …
S Lakshmanan, SK Rao, MR Muthuvel… - Journal of Magnetism …, 2017 - Elsevier
Abstract Magnetization of Ta/CoFeB/Ta trilayer films with thick layer of CoFeB deposited under different substrate temperatures (T s) via ultra-high vacuum DC sputtering technique …
L Liu, X Ding, J Sun, S Li, EKH Salje - Nano Letters, 2016 - ACS Publications
Bent Cu–Al–Ni nanopillars (diameters 90–750 nm) show a shape memory effect, SME, for diameters D> 300 nm. The SME and the associated twinning are located in a small …