[HTML][HTML] Group III-nitride lasers: a materials perspective
An overview of III-Nitride based laser diodes (LDs) is presented focusing on the materials
challenges in each phase of device development. We discuss early breakthroughs leading …
challenges in each phase of device development. We discuss early breakthroughs leading …
Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with electronic blocking layers
JR Chen, CH Lee, TS Ko, YA Chang, TC Lu… - Journal of Lightwave …, 2008 - opg.optica.org
Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with a
ternary AlGaN or a quaternary AlInGaN electronic blocking layer (EBL) have been …
ternary AlGaN or a quaternary AlInGaN electronic blocking layer (EBL) have been …
Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers
JR Chen, SC Ling, HM Huang, PY Su, TS Ko, TC Lu… - Applied Physics B, 2009 - Springer
The optical properties of InGaN multi-quantum-well laser diodes with different polarization-
matched AlInGaN barrier layers have been investigated numerically by employing an …
matched AlInGaN barrier layers have been investigated numerically by employing an …
Determination of internal parameters in blue InGaN laser diodes by the measurement of cavity-length dependent characteristics
The characteristics of blue InGaN single-quantum-well laser diodes (LDs) emitting at 445 nm
are investigated with varying cavity length of the LDs from 650 to 1450 μ m. From the …
are investigated with varying cavity length of the LDs from 650 to 1450 μ m. From the …
Highly stable temperature characteristics of InGaN blue laser diodes
We report stable temperature characteristics of threshold current and output power in InGaN
blue laser diodes emitting around 450 nm. The threshold current is changed by< 3 mA in …
blue laser diodes emitting around 450 nm. The threshold current is changed by< 3 mA in …
Quaternary ultraviolet AlInGaN MQW laser diode performance using quaternary AlInGaN electron blocking layer
The effect of polarization-matched Al_0. 25In_0. 08Ga_0. 67N electron-blocking layer (EBL)
on the optical performance of ultraviolet Al_0. 08In_0. 08Ga_0. 84N/Al_0. 1In_0. 01Ga_0 …
on the optical performance of ultraviolet Al_0. 08In_0. 08Ga_0. 84N/Al_0. 1In_0. 01Ga_0 …
Recent achievements of AlInGaN based laser diodes in blue and green wavelength
AlInGaN based blue and blue-green LDs were investigated with regard to the characteristics
of GaN semiconductor laser diodes. High power, single mode blue LDs with high COD level …
of GaN semiconductor laser diodes. High power, single mode blue LDs with high COD level …
Comparison of output power of InGaN laser diodes for different Al compositions in the AlGaN n-cladding layer
The output power of InGaN multiple-quantum-well laser diodes (LDs) emitting at 405 nm
wavelength is compared for several Al composition in the AlGaN n-cladding layer. The Al …
wavelength is compared for several Al composition in the AlGaN n-cladding layer. The Al …
Analysis of GaN based high‐power diode lasers after singular degradation events
Damage patterns caused by the Catastrophic Optical Damage (COD) are analyzed in GaN‐
based high‐power diode lasers. In contrast to standard failure analysis, the devices are …
based high‐power diode lasers. In contrast to standard failure analysis, the devices are …
Efficiency enhancement in InGaN-based laser diodes using an optimized Al0. 12Ga0. 88N electron blocking layer
In this paper, a design for an electron blocking layer (EBL) is proposed to enhance the wall
plug efficiency of InGaN-based laser diodes. Using calibrated 3D simulations (including …
plug efficiency of InGaN-based laser diodes. Using calibrated 3D simulations (including …