This paper reviews the recent progress in germanium (Ge) spintronics on the basis of the
electrical spin injection from ferromagnets (FM), where Ge is a next generation …

Abstract “Heterogeneous Integration” is a promising approach for high‐performance hybrid
flexible electronics that combine printed electronics and silicon technology. Despite …

Extending the inventory of two-dimensional (2D) materials remains highly desirable, given
their excellent properties and wide applications. Current studies on 2D materials mainly …

CMOS utilizing high-mobility III–V/Ge channels on Si substrates is expected to be one of the
promising devices for high-performance and low power advanced LSIs in the future …

A novel TreeFET architecture as a combination of stacked nanosheets and additional fin
interbridges between nanosheets can enhance I ON per footprint. The straight sidewalls of …

In this letter, we report the first study of the dependence of carrier mobility and drive current I
Dsat of Ge 0.958 Sn 0.042 p-channel metal-oxide-semiconductor field-effect transistors …

In this paper, we demonstrate high-mobility bulk Ge N-and P-FETs with GeON gate
dielectric. The highest electron mobility to date in Ge is reported, and two times improvement …

Raman shifts are investigated on silicon and germanium substrates under the uniaxial
tensile strain on various substrate orientations. The strain splits the triply degenerate optical …

The TreeFET channel, which is a combination of vertically stacked nanosheet channels and
fin-shaped interbridge channels in between the nanosheets, can provide an additional …

We report a strain effect on spin transport in semiconductors that exhibit Ge-like conduction
bands at room temperature. Using four-terminal nonlocal spin-transport measurements in …