III‐V semiconductors, GaAs and in particular InGaP, are used in many different electronic
applications, such as high power and high frequency devices, laser diodes and high …

The aim of this article is twofold. First, we give a brief historical and forward-looking overview
of conventional and SSL lighting technologies. We focus on SSL technology based on …

We describe the design, fabrication, and measured characteristics of the high-power
optically pumped-semiconductor (OPS) vertical-external-cavity surface-emitting lasers …

Strained-layer quantum wells have revolutionized the performance of near-infrared diode
lasers. Two primary factors leading to the prevalence of such materials are; 1) the ability for …

High electro-optical conversion efficiency is one of the most distinctive features of
semiconductor lasers as compared to other types of lasers. Its further increase remains a …

By incorporating a broad transverse waveguide (1.3 μm) in 0.97-μm-emitting InGaAs
(P)/InGaP/GaAs separate-confinement-heterostructure quantum-well diode-laser structures …

Accurate analytical approximations are derived for the equivalent transverse spot size, d/Γ (<
5% error), and the transverse beamwidth θ 1/2 (< 2% error), of broad-waveguide-type diode …

We review the development of a new class of high-power, edge-emitting, semiconductor
optical gain medium based on the slab-coupled optical waveguide (SCOW) concept. We …

Photoluminescence (PL) line shapes in InGaN multiple quantum well structures have been
studied experimentally and theoretically between 10 and 300 K. The higher temperature PL …

0.98 µm-emitting, broad-waveguide-type InGaAs/InGaP/GaAs diode lasers have been
optimised for maximum wallplug efficiency. Optimised-facet-coated, 100 µm-widestripe, 500 …