A review on hot-carrier-induced degradation of lateral DMOS transistor
With the scaling of process node and increase of operation voltage, the electrical fields and
impact ionization generation rates in lateral double-diffused MOS (LDMOS) transistors are …
impact ionization generation rates in lateral double-diffused MOS (LDMOS) transistors are …
Total-ionizing-dose irradiation-induced dielectric field enhancement for high-voltage SOI LDMOS
Breakdown voltage (BV) shifting behavior induced by total-ionizing-dose (TID) irradiation is
investigated for high-voltage SOI LDMOS, in this letter. The BV increase caused by …
investigated for high-voltage SOI LDMOS, in this letter. The BV increase caused by …
A 300-V ultra-low-specific on-resistance high-side p-LDMOS with auto-biased n-LDMOS for SPIC
B Yi, X Chen - IEEE Transactions on Power Electronics, 2016 - ieeexplore.ieee.org
In this paper, a high-side p-channel LDMOS (pLDMOS) with an auto-biased n-channel
LDMOS (n-LDMOS) based on Triple-RESURF technology is proposed. The p-LDMOS …
LDMOS (n-LDMOS) based on Triple-RESURF technology is proposed. The p-LDMOS …
A review of HVI technology
The reduction of breakdown voltage (BV) influenced by high voltage interconnection (HVI) is
a key problem in power integrated circuit, which essentially is that the modulation of electric …
a key problem in power integrated circuit, which essentially is that the modulation of electric …
Investigation on total-ionizing-dose radiation response for high voltage ultra-thin layer SOI LDMOS
Total-ionizing-dose radiation response for 600V ultra-thin layer SOI LDMOS transistor is
investigated. Radiation conduction modulation model is proposed to reveal the degradation …
investigated. Radiation conduction modulation model is proposed to reveal the degradation …
A novel vertical field plate lateral device with ultralow specific on-resistance
A novel vertical field plate (VFP) lateral device with ultralow specific on-resistance (RON, sp)
is proposed in this paper. The VFP surrounded by oxide is inserted in the bulk of the drift …
is proposed in this paper. The VFP surrounded by oxide is inserted in the bulk of the drift …
A RESURF-enhanced p-channel trench SOI LDMOS with ultralow specific on-resistance
K Zhou, X Luo, Q Xu, Z Li… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
A low specific on-resistance () silicon-on-insulator (SOI) p-channel LDMOS (pLDMOS) with
an enhanced reduced surface field (RESURF) effect and self-shielding effect of the back …
an enhanced reduced surface field (RESURF) effect and self-shielding effect of the back …
250 V thin-layer SOI technology with field pLDMOS for high-voltage switching IC
A 250 V thin-layer SOI technology based on a 1.5-μm-thick SOI layer is developed for high-
voltage (HV) switching IC. HV thin-layer silicon on insulator (SOI) field p-channel LDMOS …
voltage (HV) switching IC. HV thin-layer silicon on insulator (SOI) field p-channel LDMOS …
Analytical model for high-k SOI pLDMOS with self-adaptive balance of polarization charge
L Wu, T Qiu, X Song, B Zhang, H Liu, Q Liu - Microelectronics Journal, 2023 - Elsevier
The analytical model of high-k SOI pLDMOS (HK SOI pLDMOS) with adaptive polarization
charges is proposed in this paper. The HK SOI pLDMOS structure features a HK dielectric …
charges is proposed in this paper. The HK SOI pLDMOS structure features a HK dielectric …
Back-Gate Effect on and BV for Thin Layer SOI Field p-Channel LDMOS
The Backgate (BG) effect on specific ON-resistance (R ON, sp) and breakdown voltage (BV)
for the thin layer Silicon On Insulator (SOI) field p-channel lateral diffusion MOS (pLDMOS) …
for the thin layer Silicon On Insulator (SOI) field p-channel lateral diffusion MOS (pLDMOS) …