Silicon was implanted with a high boron dose (5× 10 15 at. cm− 2) at 30 keV and further
annealed at 950 C for 30 s. The sample was analyzed using transmission electron …

Fission times of uraniumlike nuclei with excitation energies up to about 250 MeV have been
inferred from blocking effects in a single crystal. They are found longer by at least 1 order of …

The recently observed phenomenon of boron uphill diffusion during low-temperature
annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is …

Experiments on the depth dependence of transient enhanced diffusion (TED) of boron
during rapid thermal annealing of Ge-preamorphized layers reveal a linear decrease in the …

We have studied the role of boron ion energy in the engineering of dislocation loops for
silicon light-emitting diodes (LEDs). Boron ions from 10 to 80 keV were implanted in (100) Si …

The evolution of boron segregation to extended defects during thermal annealing was
studied with secondary ion mass spectrometry and cross-sectional transmission electron …

Solid phase epitaxial regrowth (SPER) is a promising method for junction formation of sub-
65 nm complementary metal–oxide–semiconductor technology nodes. This is mainly due to …

The origin of two luminescence bands with maxima around 1.05 eV and 0.95 eV is studied
in silicon pn diodes prepared by boron implantation. The two peaks are related to the …

Redistribution during annealing of low-energy boron (B) implants in silicon on insulator
(SOI) structures and in bulk Si has been investigated by comparing secondary ion mass …

Les systèmes avancés d'assistance à la conduite automobile ont comme objectif d'apporter
de l'intelligence au véhicule en l'équipant d'un ensemble de capteurs extéroceptifs et …