Review of silicon carbide processing for power MOSFET

C Langpoklakpam, AC Liu, KH Chu, LH Hsu, WC Lee… - Crystals, 2022 - mdpi.com
Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage,
higher thermal conductivity, higher operating frequency, higher operating temperature, and …

Recent advances in processing, and mechanical, thermal and electrical properties of Cu-SiC metal matrix composites prepared by powder metallurgy

MR Akbarpour, F Gazani, HM Mirabad, I Khezri… - Progress in Materials …, 2023 - Elsevier
The demand for advanced materials such as silicon carbide particles reinforced copper
matrix composites (Cu-SiC) is increasing due to the stringent design requirement in the …

[HTML][HTML] Production and processing of graphene and related materials

C Backes, AM Abdelkader, C Alonso… - 2D …, 2020 - iopscience.iop.org
We present an overview of the main techniques for production and processing of graphene
and related materials (GRMs), as well as the key characterization procedures. We adopt …

A materials roadmap to functional neural interface design

SM Wellman, JR Eles, KA Ludwig… - Advanced functional …, 2018 - Wiley Online Library
Advancements in neurotechnologies for electrophysiology, neurochemical sensing,
neuromodulation, and optogenetics are revolutionizing scientific understanding of the brain …

Silicon carbide and its composites for nuclear applications–Historical overview

Y Katoh, LL Snead - Journal of Nuclear Materials, 2019 - Elsevier
The goal of achieving higher thermal efficiency in nuclear power systems, whether fission or
fusion based, has invariably led to the study and development of refractory metals, ceramics …

Isolated electron spins in silicon carbide with millisecond coherence times

DJ Christle, AL Falk, P Andrich, PV Klimov… - Nature materials, 2015 - nature.com
The elimination of defects from SiC has facilitated its move to the forefront of the
optoelectronics and power-electronics industries. Nonetheless, because certain SiC defects …

Room temperature coherent control of defect spin qubits in silicon carbide

WF Koehl, BB Buckley, FJ Heremans, G Calusine… - Nature, 2011 - nature.com
Electronic spins in semiconductors have been used extensively to explore the limits of
external control over quantum mechanical phenomena. A long-standing goal of this …

A path beyond metal and silicon: polymer/nanomaterial composites for stretchable strain sensors

A Qiu, P Li, Z Yang, Y Yao, I Lee… - Advanced Functional …, 2019 - Wiley Online Library
Conventional strain sensors based on metals and semiconductors are rigid and cannot
measure soft and stretchable objects. Thus, new strain sensors based on …

Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface

DJ Christle, PV Klimov, CF de las Casas, K Szász… - Physical Review X, 2017 - APS
The divacancies in SiC are a family of paramagnetic defects that show promise for quantum
communication technologies due to their long-lived electron spin coherence and their …

Homogeneous large-area graphene layer growth on -SiC(0001)

C Virojanadara, M Syväjarvi, R Yakimova… - Physical Review B …, 2008 - APS
Homogeneous large-area graphene monolayers were successfully prepared ex situ on 6 H-
SiC (0001). The samples have been studied systematically and the results are compared …