Advanced CMOS gate stack: Present research progress
The decreasing sizes in complementary metal oxide semiconductor (CMOS) transistor
technology require the replacement of SiO2 with gate dielectrics that have a high dielectric …
technology require the replacement of SiO2 with gate dielectrics that have a high dielectric …
Analysis of interface states in Au/ZnO/p-InP (MOS) structure
FZ Acar, A Buyukbas-Ulusan, A Tataroglu - Journal of Materials Science …, 2018 - Springer
Zinc oxide (ZnO) film was deposited on p-type InP substrate by means of radio frequency
magnetron sputtering technique and thus the Au/ZnO/p-InP (MOS) structure was fabricated …
magnetron sputtering technique and thus the Au/ZnO/p-InP (MOS) structure was fabricated …
On the energy distribution of interface states and their relaxation time and capture cross section profiles in Al/SiO2/p-Si (MIS) Schottky diodes
The energy distribution profile of the interface states (Nss) and their relaxation time (τ) and
capture cross section (σp) of metal–insulator–semiconductor (Al/SiO2/p-Si) Schottky diodes …
capture cross section (σp) of metal–insulator–semiconductor (Al/SiO2/p-Si) Schottky diodes …
Analysis of surface states and series resistance in Au/n-Si Schottky diodes with insulator layer using current–voltage and admittance–voltage characteristics
In order to good interpret the experimentally observed Au/n-Si (metal–semiconductor)
Schottky diodes with thin insulator layer (18Å) parameters such as the zero-bias barrier …
Schottky diodes with thin insulator layer (18Å) parameters such as the zero-bias barrier …
Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures
The forward and reverse bias I–V, C–V, and G/ω–V characteristics of (Ni/Au) Schottky barrier
diodes (SBDs) on the Al0. 22Ga0. 78N/AlN/GaN high-electron-mobility-transistor (HEMTs) …
diodes (SBDs) on the Al0. 22Ga0. 78N/AlN/GaN high-electron-mobility-transistor (HEMTs) …
N-MOSFETs formed on solid phase epitaxially grown GeSn film with passivation by oxygen plasma featuring high mobility
YC Fang, KY Chen, CH Hsieh, CC Su… - ACS applied materials & …, 2015 - ACS Publications
Solid phase epitaxially grown GeSn was employed as the platform to assess the eligibility of
direct O2 plasma treatment on GeSn surface for passivation of GeSn N-MOSFETs. It has …
direct O2 plasma treatment on GeSn surface for passivation of GeSn N-MOSFETs. It has …
Investigation of Negative Capacitance in Admittance Analysis of Metal Semiconductors Interlayered with ZnFe2O4 Doped PVA
JAM Alsmael, SO Tan - IEEE Transactions on Nanotechnology, 2024 - ieeexplore.ieee.org
In this work, Al/p-Si structures with (ZnFe 2 O 4− PVA) interfacial film, which is grown by the
electrospinning-method, have been analyzed by using impedance measurements in the …
electrospinning-method, have been analyzed by using impedance measurements in the …
Effect of annealing temperatures on properties of sol‐gel grown ZnO‐ZrO2 films
T Ivanova, A Harizanova, T Koutzarova… - Crystal Research and …, 2010 - Wiley Online Library
Abstract Mixed ZnO‐ZrO2 films have been obtained by sol‐gel technology. By using spin
coating method, the films were deposited on Si and glass substrates. The influence of …
coating method, the films were deposited on Si and glass substrates. The influence of …
Thermal oxidation and nitridation of sputtered Zr thin film on Si via N2O gas
Formation of ZrO2 by simultaneous thermal oxidation and nitridation in nitrous oxide of
sputtered Zr on Si substrate is reported here for the first time. Sputtered Zr on Si substrate …
sputtered Zr on Si substrate is reported here for the first time. Sputtered Zr on Si substrate …
Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AlN/GaN heterostructures
The dielectric properties and AC electrical conductivity (σac) of the (Ni/Au)/Al0. 22Ga0.
78N/AlN/GaN heterostructures, with and without the SiNx passivation, have been …
78N/AlN/GaN heterostructures, with and without the SiNx passivation, have been …