Enabling high performance n-type metal oxide semiconductors at low temperatures for thin film transistors
Amorphous oxide semiconductors have drawn considerable attention as a replacement for
ubiquitous silicon based technologies. By virtue of their flexible substrate compatibility and …
ubiquitous silicon based technologies. By virtue of their flexible substrate compatibility and …
High Performance Amorphous In0.5Ga0.5O Thin‐Film Transistor Embedded with Nanocrystalline In2O3 Dots for Flexible Display Application
High‐performance, coplanar amorphous In0. 5Ga0. 5O (a‐IGO) thin film transistor (TFT) on a
polyimide (PI) substrate deposited by spray pyrolysis (SP) is reported. The SP a‐IGO film …
polyimide (PI) substrate deposited by spray pyrolysis (SP) is reported. The SP a‐IGO film …
Performance improvement in amorphous zinc tin oxide ultraviolet photodetectors using an asymmetric pair of interdigitated electrodes
CY Tsay, YC Chen, HM Tsai, CL Hsu - Physica B: Condensed Matter, 2022 - Elsevier
Solar-blind ultraviolet (UV) photodetectors with an amorphous zinc− tin oxide (a-ZTO)
sensing layer have been fabricated on alkali-free glass substrates by a sol-gel method and …
sensing layer have been fabricated on alkali-free glass substrates by a sol-gel method and …
Stability study of indium tungsten oxide thin‐film transistors annealed under various ambient conditions
M Qu, CH Chang, T Meng, Q Zhang… - … status solidi (a), 2017 - Wiley Online Library
Amorphous tungsten‐doped indium oxide thin‐film transistors (a‐IWO‐TFTs) are prepared
by RF sputtering and annealed in air, O2, and N2 ambients. The influence of annealing …
by RF sputtering and annealed in air, O2, and N2 ambients. The influence of annealing …
Modification of intrinsic defects in IZO/IGZO thin films for reliable bilayer thin film transistors
Dual active channel IZO/IGZO thin film transistors as such and with ZnO interlayer are
fabricated and characterized to investigate the impact of ultra-thin ZnO insertion on their …
fabricated and characterized to investigate the impact of ultra-thin ZnO insertion on their …
Effects of Metal-Hydroxyl and InOx Defects on Performance of InGaZnO Thin-Film Transistor
XD Huang, Y Ma, JQ Song, PT Lai… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
The properties of metal-hydroxyl (M-OH) and InO x defects in InGaZnO (IGZO) and their
influences on the performance of IGZO thin-film transistor (TFT) are investigated. The defects …
influences on the performance of IGZO thin-film transistor (TFT) are investigated. The defects …
[HTML][HTML] Rapid thermal annealing effect on performance variations of solution processed indium–gallium–zinc-oxide thin-film transistors
S Kil, J Jeong - AIP Advances, 2023 - pubs.aip.org
In this paper, the 1 min annealing effect on the electrical characteristics of solution-
processed amorphous indium–gallium–zinc-oxide thin-film transistors (a-IGZO TFTs) was …
processed amorphous indium–gallium–zinc-oxide thin-film transistors (a-IGZO TFTs) was …
The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiOX as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide
JH Park, MH Shin, JS Yi - Nanomaterials, 2019 - mdpi.com
We fabricated the transparent non-volatile memory (NVM) of a bottom gate thin film transistor
(TFT) for the integrated logic devices of display applications. The NVM TFT utilized indium …
(TFT) for the integrated logic devices of display applications. The NVM TFT utilized indium …
Effect of annealing temperature on physical and electrical properties of solution-processed polycrystalline In2Ga2ZnO7 thin film
Influence of annealing temperature on the properties of In 2 Ga 2 ZnO 7 (IGZO) thin film
prepared using sol–gel method was extensively studied. Annealing treatment at four …
prepared using sol–gel method was extensively studied. Annealing treatment at four …
Ultra-high-image-density large-size organic light-emitting devices based on In-Ga-Zn-O thin-film transistors with a coplanar structure
HJ Shin, TW Kim - Optics Express, 2018 - opg.optica.org
Drain currents as functions of the gate voltages for the thin-film transistors (TFTs) showed
that their output currents had slight differential variations in the saturation region just as the …
that their output currents had slight differential variations in the saturation region just as the …