III-nitride core–shell nanorod array on quartz substrates
We report the fabrication of near-vertically elongated GaN nanorods on quartz substrates. To
control the preferred orientation and length of individual GaN nanorods, we combined …
control the preferred orientation and length of individual GaN nanorods, we combined …
[HTML][HTML] A low-cost and convenient route of fabricating GaN films with P-type mixed microcrystalline and amorphous structure deposited via Ga target of magnetron …
X Chen, N Li, Z Xing, J Zu, X Meng, Z Zhou, Q Li… - APL Materials, 2024 - pubs.aip.org
GaN, a third-generation semiconductor, has gained widespread attention owing to its high
temperature resistance, wide bandgap, and high critical breakdown electric fields …
temperature resistance, wide bandgap, and high critical breakdown electric fields …
Vertical alignment of InN-and GaN-based nanopillar crystals grown on a multicrystalline Si substrate
Y Sato, S Saito, K Shiraishi, S Taniguchi, Y Izuka… - Journal of Crystal …, 2020 - Elsevier
In this study, alignments of nanopillar crystals consisting of indium nitride (InN) and gallium
nitride (GaN) based semiconductors were successfully controlled by inserting “steering” …
nitride (GaN) based semiconductors were successfully controlled by inserting “steering” …
TEM study of GaN-based nanopillar-shaped-crystals grown on a multicrystalline Si substrate
Y Sato, K Saito, K Sato, S Saito… - Japanese Journal of …, 2019 - iopscience.iop.org
A gallium nitride-based thin film is grown on a multicrystalline Si substrate by a molecular
beam epitaxy apparatus. The microstructure of the crystalline film is closely examined by …
beam epitaxy apparatus. The microstructure of the crystalline film is closely examined by …
Luminescence dynamics in AlGaN with AlN content of 20%
S Soltani, M Bouzidi, A Touré, M Gerhard… - … status solidi (a), 2017 - Wiley Online Library
Optical properties and carrier dynamics of an AlGaN layer with an AlN content of 20% have
been studied using time‐resolved photoluminescence (TR‐PL). Despite the high density of …
been studied using time‐resolved photoluminescence (TR‐PL). Despite the high density of …
Characteristic comparison between GaN layer grown on c-plane cone shape patterned sapphire substrate and planar c-plane sapphire substrate by HVPE
GaN layers were grown on planar c-plane sapphire (Sample A) and c-plane cone-shape
patterned sapphire substrate (PSS)(Sample B) with two growth steps by a hydride vapor …
patterned sapphire substrate (PSS)(Sample B) with two growth steps by a hydride vapor …
Effect of annealing time and NH3 flow on GaN films deposited on amorphous SiO2 by MOCVD
T Li, C Liu, Z Zhang, B Yu, H Dong, W Jia, Z Jia… - Superlattices and …, 2018 - Elsevier
GaN polycrystalline films were successfully grown on amorphous SiO 2 by metal–organic
chemical vapour deposition to fabricate transferable devices using inorganic films. Field …
chemical vapour deposition to fabricate transferable devices using inorganic films. Field …
Structure dependence of GaN-based nanopillar-shaped crystals grown on a quartz glass substrate on their growth conditions
Y Sato, A Fujiwara, K Shimomura - Applied Physics A, 2019 - Springer
Nanopillar-shaped crystals of gallium–nitride-based semiconductors were grown on a
quartz glass substrate using molecular beam epitaxy apparatus. Two sets of radio-frequency …
quartz glass substrate using molecular beam epitaxy apparatus. Two sets of radio-frequency …