A cryogenic broadband sub-1-dB NF CMOS low noise amplifier for quantum applications
A cryogenic broadband low noise amplifier (LNA) for quantum applications based on a
standard 40-nm CMOS technology is reported. The LNA specifications are derived from the …
standard 40-nm CMOS technology is reported. The LNA specifications are derived from the …
Characterization and analysis of on-chip microwave passive components at cryogenic temperatures
This paper presents the characterization and modeling of microwave passive components in
TSMC 40-nm bulk CMOS, including metal-oxide-metal (MoM) capacitors, transformers, and …
TSMC 40-nm bulk CMOS, including metal-oxide-metal (MoM) capacitors, transformers, and …
Design and analysis of a 4.2 mW 4 K 6–8 GHz CMOS LNA for superconducting qubit readout
A Caglar, S Van Winckel, S Brebels… - IEEE Journal of Solid …, 2022 - ieeexplore.ieee.org
This article proposes a cryogenic inverter-based low noise amplifier (LNA) for qubit readout.
Its input impedance matching is realized by a high-ON-chip gate inductor and capacitive …
Its input impedance matching is realized by a high-ON-chip gate inductor and capacitive …
Investigation on temperature behavior for a GaAs E-pHEMT MMIC LNA
Q Lin, L Jia, H Wu, X Wang - Micromachines, 2022 - mdpi.com
In order to investigate the temperature behavior for monolithic microwave integrated circuits
(MMICs) under alpine conditions, the performance parameters of a 0.4–3.8 GHz gallium …
(MMICs) under alpine conditions, the performance parameters of a 0.4–3.8 GHz gallium …
Impact of Deep Cryogenic Temperatures on High-k Stacked Dual Gate Junctionless MOSFET Performance: Analog and RF analysis
R Ghosh, RP Nelapati - Silicon, 2024 - Springer
This article presents the reliability analysis of a High-k stacked Dual Gate Junction-less
MOSFET at Deep Cryogenic Temperatures (as low as 50 Kelvin) in terms of dc, analog and …
MOSFET at Deep Cryogenic Temperatures (as low as 50 Kelvin) in terms of dc, analog and …
An ultra-low noise figure and multi-band re-configurable low noise amplifier
In this article, we design and fabricate an ultra-low noise figure, multi-band low noise
amplifier (LNA) monolithic microwave integrated circuit (MMIC) using GaAs pHEMT process …
amplifier (LNA) monolithic microwave integrated circuit (MMIC) using GaAs pHEMT process …
Performance degradation investigation for a GaAs PHEMT high gain MMIC PA taking into account the temperature
L Jia, Q Lin, H Wu, X Wang - electronics, 2022 - mdpi.com
In order to comprehensively grasp the performance changes for the monolithic microwave
integrated circuit (MMIC), this paper proposes that the complete temperature reliability tests …
integrated circuit (MMIC), this paper proposes that the complete temperature reliability tests …
Holistic device modeling: Toward a unified MOSFET model including variability, aging, and extreme operating conditions
MB Yelten - IEEE Transactions on Circuits and Systems II …, 2022 - ieeexplore.ieee.org
This tutorial presents the holistic modeling concept in the context of metal-oxide-
semiconductor field-effect-transistors (MOSFETs). First, the standard MOSFET modeling …
semiconductor field-effect-transistors (MOSFETs). First, the standard MOSFET modeling …
A 4.2-9.2 GHz cryogenic transformer feedback low noise amplifier with 4.5 K noise temperature and noise-power matching in 22nm CMOS FDSOI
This paper presents a compact broadband cryogenic low noise amplifier (LNA) with
simultaneous noise and power matching with transformer-based feedback. The LNA is …
simultaneous noise and power matching with transformer-based feedback. The LNA is …
An automated setup for the characterization of time-based degradation effects including the process variability in 40-nm CMOS transistors
This article reports a test chip design in commercial 40-nm process technology to
characterize the level of time-based degradation in metal-oxide-semiconductor field-effect …
characterize the level of time-based degradation in metal-oxide-semiconductor field-effect …