Surfaces and interfaces of hydrogen-terminated diamonds are reviewed. The control and
preparation of diamond surfaces have been greatly advanced by the recent progress in …

Discovered and reported exactly 40 years ago, microwave plasma-assisted chemical vapor
deposition (MPACVD) pointed out an economic technology that could potentially produce …

We have deposited epitaxial diamond films with very low angular spread on epitaxial-phase
silicon carbide layers on silicon 001 substrates. From x-ray rocking curve measurements …

We have successfully grown smooth diamond thin films epitaxially on (001) iridium surfaces
through a direct-current plasma chemical vapor deposition process with two steps: ion …

Diamond film deposition on Si “benchmark” substrates is experimentally investigated at high
pressures using a microwave plasma disk reactor and CH4/H2 gas mixtures. In this …

The influence of ion bombardment on the nucleation and growth of diamond films by
microwave plasma chemical vapor deposition (CVD) has been investigated. The following …

Diamond films were grown by microwave plasma chemical vapor deposition on as-received
platinum (Pt) foils, specially processed Pt foils with (111) domains, bulk single-crystal Pt with …

Heteroepitaxial growth of diamond films on-SiC and Si substrates was first achieved in 1992.
1, 2 The structural quality of the films has been clearly improved during the last few years. 3 …

Highly oriented cubic silicon carbide (β-SiC) thin films are deposited on Si (111) substrates
using bias assisted low-pressure hot filament chemical vapour deposition technique …

The exceptional performance of diamondbased field-effect transistor technology is not
restricted to devices that use single crystallinediamond alone. This letter explores the full …