N Keshmiri, D Wang, B Agrawal, R Hou… - IEEE Access, 2020 - ieeexplore.ieee.org
Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) enable higher efficiency, higher power density, and smaller passive components resulting in lighter, smaller and more …
In recent decades, several factors such as environmental protection, fossil fuel scarcity, climate change and pollution have driven the research and development of a more clean …
A large number of factors such as the increasingly stringent pollutant emission policies, fossil fuel scarcity and their price volatility have increased the interest towards the partial or …
Power electronic systems have a great impact on modern society. Their applications target a more sustainable future by minimizing the negative impacts of industrialization on the …
In the automotive industry, the design and implementation of power converters and especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely …
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing …
J Carter, Z Fan, J Cao - Journal of Power Sources, 2020 - Elsevier
Large Li-ion battery packs are an enabling technology for electric vehicles, smart homes and the smart grid. Keeping the individual cells that make up the battery pack balanced reduces …
RT Yadlapalli, A Kotapati, R Kandipati… - … Journal of Energy …, 2021 - Wiley Online Library
The third generation wide bandgap (WBG) semiconductor materials exhibit a prominent role in various applications such as adapters, uninterrupted power supplies, smart grids, and …
Precise current sensing is essential for several power electronics' protection, control, and reliability mechanisms. Even so, WBG power converters will likely struggle to develop a …