Abstract Commonly, the Al-rich AlGaN layer acts as electron blocking layer (EBL) to block
the overflow of electrons from the active region in conventional AlGaN deep-ultraviolet …

This paper reports the illustration of electron blocking layer (EBL)-free AlGaN light-emitting
diodes (LEDs) operating in the deep-ultraviolet (DUV) wavelength at∼ 270nm. In this work …

AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) generally employ an
electron blocking layer (EBL) to suppress electron leakage. However, the EBL can also …

The electron blocking layer (EBL) plays a vital role in blocking the electron overflow from an
active region in the AlGaN-based deep-ultraviolet light-emitting diode (DUV-LED). Besides …

In this paper, AlInN nanowire ultraviolet light-emitting diodes (LEDs) with emission at∼ 299
nm have been successfully demonstrated. We have further studied the light extraction …

In this Letter, the electron-blocking-layer (EBL)-free AlGaN ultraviolet (UV) light-emitting
diodes (LEDs) using a strip-in-a-barrier structure have been proposed. The quantum barrier …

In this paper, deep ultraviolet AlGaN light-emitting diodes (LEDs) with a novel double-sided
step graded superlattice (DSGS) electron blocking layer (EBL) instead of a conventional …

Electron leakage is one of the critical challenges in AlGaN ultraviolet (UV) light-emitting
diodes (LEDs). In this regard, ap-type AlGaN electron-blocking layer (EBL) has been utilized …

To prevent electron leakage in deep ultraviolet (UV) AlGaN light-emitting diodes (LEDs), Al-
rich p-type AlxGa (1− x) N electron blocking layer (EBL) has been utilized. However, the …

In deep ultraviolet light-emitting diodes (DUV LEDs), we numerically investigate the effect of
p-doped AlInN last quantum barrier (LQB). The p-doped AlInN LQB not only suppresses the …