The realisation of photonic devices for different energy ranges demands materials with
different bandgaps, sometimes even within the same device. The optimal solution in terms of …

InGaAs is an important bandgap-variable ternary semiconductor which has wide
applications in electronics and optoelectronics. In this work, single-crystal InGaAs nanowires …

Here we report on the Ga self-catalyzed growth of near full-composition-range energy-gap-
tunable GaAs1–x Sb x nanowires by molecular-beam epitaxy. GaAs1–x Sb x nanowires with …

Compound semiconductor alloys such as In x Ga 1− x As, GaAs x P 1− x, or CuIn x Ga 1− x
Se 2 are increasingly employed in numerous electronic, optoelectronic, and photonic …

The evolution of the optical phonons in layered semiconductor alloys SnSe (1–x) S x is
studied as a function of the composition by using polarized Raman spectroscopy with six …

We report on the operation of a double metal waveguide far-infrared quantum cascade laser
emitting at 28 μm, corresponding to the AlAs-like phonon reststrahlen band. To avoid …

Rolled-up tubes based on released III–V heterostructures have been extensively studied
and established as optical resonators in the last two decades. In this review, we discuss how …

The compositional dependence of the Ge–Ge Raman mode in SnGe alloys has been
measured in samples grown on Si substrates using a chemical vapor deposition technique …

Thanks to their wide band structure tunability, GaAs 1− x Sb x nanowires provide exciting
perspectives in optoelectronic and energy harvesting applications. The control of …

InGaAs nanowires (NWs) show tremendous potential as channel materials in the field of
near-infrared photoelectric detections. However, the abundance of surface states on InGaAs …