Intrapulse in situ Raman probing of electron, phonon and structural dynamics in synthetic diamond excited by ultrashort laser pulses: Insights into atomistic structural …
SI Kudryashov, PA Danilov, VG Vins, EV Kuzmin… - Carbon, 2024 - Elsevier
Synthetic Ib-diamond plate with a minor concentration of substitutional atomic nitrogen C-
centers was exposed in its bulk by tightly focused 0.2-ps, 525-nm laser pulses, coming at 80 …
centers was exposed in its bulk by tightly focused 0.2-ps, 525-nm laser pulses, coming at 80 …
Amorphization and ablation of crystalline silicon using ultrafast lasers: dependencies on the pulse duration and irradiation wavelength
M Garcia‐Lechuga, N Casquero… - Laser & Photonics …, 2024 - Wiley Online Library
Using lasers to achieve controlled crystallographic phase changes in silicon with high
spatial precision promises new manufacturing solutions in semiconductor technologies …
spatial precision promises new manufacturing solutions in semiconductor technologies …
Birefringent microstructures in bulk fluorite produced by ultrafast pulsewidth-dependent laser inscription
Three-segment microtracks were for the first time inscribed in bulk fluorite in the scanning
mode via multishot exposure by tightly-focused 515-nm ultrashort laser pulses of variable …
mode via multishot exposure by tightly-focused 515-nm ultrashort laser pulses of variable …
Ionization dynamics and damage conditions in fused silica irradiated with mid-infrared femtosecond pulses
GD Tsibidis, E Stratakis - Applied Physics Letters, 2023 - pubs.aip.org
The employment of ultrashort laser sources at the mid-infrared (mid-IR) spectral region for
dielectrics is expected to open innovative routes for laser patterning and a wealth of exciting …
dielectrics is expected to open innovative routes for laser patterning and a wealth of exciting …
Tailoring surface topographies on solids with Mid-IR femtosecond laser pulses
Irradiation of solids with ultrashort pulses using laser sources in the mid-infrared (mid-IR)
spectral region is a yet predominantly unexplored field that opens broad possibilities for …
spectral region is a yet predominantly unexplored field that opens broad possibilities for …
Uniform subwavelength high-aspect ratio nanogratings on metal-protected bulk silicon produced by laser-induced periodic surface structuring
K Bronnikov, A Dostovalov, V Terentyev… - Applied Physics …, 2021 - pubs.aip.org
Formation of highly ordered nanostructures on a crystalline silicon surface is highly
demanded for novel optoelectronic and nanophotonic designs pushing toward development …
demanded for novel optoelectronic and nanophotonic designs pushing toward development …
Wafer-scale high aspect-ratio sapphire periodic nanostructures fabricated by self-modulated femtosecond laser hybrid technology
XC Sun, XQ Liu, ZJ Sun, SX Li, JX Zheng, H Xia… - Optics …, 2022 - opg.optica.org
Sapphire nanostructures with a high aspect-ratio have broad applications in photoelectronic
devices, which are difficult to be fabricated due to the properties of high transparency and …
devices, which are difficult to be fabricated due to the properties of high transparency and …
Direct Multiphoton Femtosecond Infrared Laser Excitation of a Diamond Lattice in the Two-Phonon Region and Modification of Color Centers
The nonlinear absorption of ultrashort laser pulses with intensities of 0.17–1.7 TW/cm2 at an
intrinsic two-photon absorption wavelength of 4673 nm in type IIb diamond has been studied …
intrinsic two-photon absorption wavelength of 4673 nm in type IIb diamond has been studied …
Extreme sub-wavelength structure formation from mid-ir femtosecond laser interaction with silicon
K Werner, E Chowdhury - Nanomaterials, 2021 - mdpi.com
Mid-infrared (MIR) wavelengths (2–10 μ m) open up a new paradigm for femtosecond laser–
solid interactions. On a fundamental level, compared to the ubiquitous near-IR (NIR) or …
solid interactions. On a fundamental level, compared to the ubiquitous near-IR (NIR) or …
Strong field excitation of electrons into localized states of fused silica
T Pflug - 2022 - monarch.qucosa.de
Abstract (DE) Obwohl amorphe Dielektrika lokalisierte Zustände im Leitungsband
aufweisen, werden Elektronen, die durch hoch intensive Laserstrahlung angeregt werden …
aufweisen, werden Elektronen, die durch hoch intensive Laserstrahlung angeregt werden …