The scaling of complementary metal–oxide–semiconductor (CMOS) technology is
increasingly challenging, but demand for low-power data storage and processing continues …

After the first unequivocal demonstration of spin transport in graphene [Tombros et al.,
Nature (London) 448, 571–574 (2007)], surprisingly at room temperature, it was quickly …

Graphene is an excellent material for long-distance spin transport but allows little spin
manipulation. Transition-metal dichalcogenides imprint their strong spin–orbit coupling into …

Abstract Two-dimensional (2D) crystals offer a unique platform due to their remarkable and
contrasting spintronic properties, such as weak spin–orbit coupling (SOC) in graphene and …

We show spin lifetimes of 12.6 ns and spin diffusion lengths as long as 30.5 μm in single
layer graphene nonlocal spin transport devices at room temperature. This is accomplished …

The explosive growth of the information era has put forward urgent requirements for
ultrahigh‐speed and extremely efficient computations. In direct contrary to charge‐based …

As an approximation to the quantum state of solids, the band theory, developed nearly
seven decades ago, fostered the advance of modern integrated solid‐state electronics, one …

An alternative to charge‐based electronics identifies the spin degree of freedom for
information communication and processing. The long spin‐diffusion length in graphene at …

The past decade has been especially creative for spintronics since the (re) discovery of
various two dimensional (2D) materials. Due to the unusual physical characteristics, 2D …

We propose an interband tunneling picture to explain and predict the interlayer twist-angle
dependence of the induced spin-orbit coupling in heterostructures of graphene and …