Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide
HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices
owing to its excellent electrical properties and compatibility with complementary metal oxide …
owing to its excellent electrical properties and compatibility with complementary metal oxide …
Parylene based memristive devices with multilevel resistive switching for neuromorphic applications
In this paper, the resistive switching and neuromorphic behaviour of memristive devices
based on parylene, a polymer both low-cost and safe for the human body, is …
based on parylene, a polymer both low-cost and safe for the human body, is …
Defect-stabilized substoichiometric polymorphs of hafnium oxide with semiconducting properties
Hafnium oxide plays an important role as a dielectric material in various thin-film electronic
devices such as transistors and resistive or ferroelectric memory. The crystallographic and …
devices such as transistors and resistive or ferroelectric memory. The crystallographic and …
Neuronal dynamics in HfO x/AlO y-based homeothermic synaptic memristors with low-power and homogeneous resistive switching
We studied the pseudo-homeothermic synaptic behaviors by integrating complimentary
metal–oxide–semiconductor-compatible materials (hafnium oxide, aluminum oxide, and …
metal–oxide–semiconductor-compatible materials (hafnium oxide, aluminum oxide, and …
Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOx based Memristive Devices
Hafnium oxide (HfOx)‐based memristive devices have tremendous potential as nonvolatile
resistive random access memory (RRAM) and in neuromorphic electronics. Despite its …
resistive random access memory (RRAM) and in neuromorphic electronics. Despite its …
Forming‐free grain boundary engineered hafnium oxide resistive random access memory devices
A model device based on an epitaxial stack combination of titanium nitride (111) and
monoclinic hafnia (11 1¯) is grown onto ac‐cut Al2O3‐substrate to target the role of grain …
monoclinic hafnia (11 1¯) is grown onto ac‐cut Al2O3‐substrate to target the role of grain …
[HTML][HTML] First steps towards the realization of a double layer perceptron based on organic memristive devices
Memristors are widely considered as promising elements for the efficient implementation of
synaptic weights in artificial neural networks (ANNs) since they are resistors that keep …
synaptic weights in artificial neural networks (ANNs) since they are resistors that keep …
Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium
U Schroeder, M Materano, T Mittmann… - Japanese Journal of …, 2019 - iopscience.iop.org
Different causes for ferroelectric properties in hafnium oxide were discussed during the last
decade including various dopants, stress, electrode materials, and surface energy from …
decade including various dopants, stress, electrode materials, and surface energy from …
On the resistive switching mechanism of parylene-based memristive devices
AA Minnekhanov, BS Shvetsov, MM Martyshov… - Organic …, 2019 - Elsevier
Parylene is a widely used polymer possessing such advantages as low cost and safety for
the human body. Recently, several studies have been conducted showing that parylene can …
the human body. Recently, several studies have been conducted showing that parylene can …