Antimonide-based ternary III–V nanowires (NWs) provide a tunable bandgap over a wide
range, and the GaAsSb material system has prospective applications in the 1.3–1.55 μm …

Core–shell GaAs-based nanowires monolithically integrated on Si constitute a promising
class of nanostructures that could enable light emitters for fast inter-and intrachip optical …

Control over the distribution of dopants in nanowires is essential for regulating their
electronic properties, but perturbations in nanowire microstructure may affect doping …

Abstract (In, Ga) alloy droplets are used to catalyse the growth of (In, Ga) As nanowires by
molecular beam epitaxy on Si (111) substrates. The composition, morphology and optical …

We report on the direct correlation between the structural and optical properties of single, as-
grown core-multi-shell GaAs/In 0.15 Ga 0.85 As/GaAs/AlAs/GaAs nanowires. Fabricated by …

Nanoprobe X-ray diffraction (nXRD) using focused synchrotron radiation is a powerful
technique to study the structural properties of individual semiconductor nanowires. However …

Embedding quantum dots in nanowires (NWs) constitutes one promising building block for
quantum photonic technologies. Earlier attempts to grow InAs quantum dots on GaAs …

This article reports on energy-dispersive micro Laue (µLaue) diffraction of an individual gold
nanowire that was mechanically deformed in three-point bending geometry using an atomic …

We compute the thermal conductivity, κ, of five representative III–V ternary alloys—namely In
x Ga 1− x As, GaAs 1− x P x, InAs 1− x Sb x, GaAs 1− x N x, and GaP 1− x N x—in the whole …

Highly faceted geometries such as nanowires are prone to form self-formed features,
especially those that are driven by segregation. Understanding these features is important in …