Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
V Miikkulainen, M Leskelä, M Ritala… - Journal of Applied …, 2013 - pubs.aip.org
Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …
suitable for depositing uniform and conformal films on complex three-dimensional …
Atomic layer deposition of groups 4 and 5 transition metal oxide thin films: focus on heteroleptic precursors
T Blanquart, J Niinistö, M Ritala… - Chemical Vapor …, 2014 - Wiley Online Library
The atomic layer deposition (ALD) process, an alternative to CVD, is universally appreciated
for its unique advantages such as excellent repeatability, conformity, and thickness control at …
for its unique advantages such as excellent repeatability, conformity, and thickness control at …
Influence of temperature and plasma parameters on the properties of PEALD HfO2
M Lapteva, V Beladiya, S Riese, P Hanke… - Optical Materials …, 2021 - opg.optica.org
HfO_2 has promising applications in semiconductors and optics due to its high dielectric
constant and high refractive index. In this work, HfO_2 thin films were deposited by plasma …
constant and high refractive index. In this work, HfO_2 thin films were deposited by plasma …
Overview of chemical vapour deposition
AC Jones, ML Hitchman - Chemical vapour deposition …, 2009 - books.google.com
In the broadest sense chemical vapour deposition (CVD) involves the formation of a thin
solid film on a substrate material by a chemical reaction of vapour-phase precursors. It can …
solid film on a substrate material by a chemical reaction of vapour-phase precursors. It can …
Preparation of wafer-scale highly conformalamorphous hafnium dioxide thin films by atomic layer deposition using a thermally stable boratabenzene ligand-containing …
MZ Ansari, P Janicek, YJ Park, S NamGung… - Applied Surface …, 2023 - Elsevier
In the present study, HfO 2 thin films were fabricated via atomic layer deposition (ALD) using
a novel heteroleptic metal organic precursor [tris (dimethylamino) …
a novel heteroleptic metal organic precursor [tris (dimethylamino) …
The Atomic Layer Deposition of HfO2 and ZrO2 using Advanced Metallocene Precursors and H2O as the Oxygen Source
CL Dezelah IV, J Niinistö, K Kukli… - Chemical Vapor …, 2008 - Wiley Online Library
The atomic layer deposition (ALD) of HfO2 and ZrO2 thin films is investigated using (MeCp)
2HfMe2,(MeCp) 2Hf (OMe)(Me),(MeCp) 2ZrMe2, and (MeCp) 2Zr (OMe)(Me) as the …
2HfMe2,(MeCp) 2Hf (OMe)(Me),(MeCp) 2ZrMe2, and (MeCp) 2Zr (OMe)(Me) as the …
Deposition of ZrO 2 and HfO 2 thin films by liquid injection MOCVD and ALD using ansa-metallocene zirconium and hafnium precursors
K Black, HC Aspinall, AC Jones, K Przybylak… - Journal of Materials …, 2008 - pubs.rsc.org
Thin films of ZrO2 and HfO2 have been deposited by liquid injection metalorganic chemical
vapour deposition (MOCVD) and atomic layer deposition (ALD) using a range of ansa …
vapour deposition (MOCVD) and atomic layer deposition (ALD) using a range of ansa …
Co-60 gamma irradiation influences on physical, chemical and electrical characteristics of HfO2/Si thin films
Co-60 gamma irradiation effects on physical, chemical and electrical characteristics of HfO
2/Si thin films have been investigated in details. The variations on the crystallographic …
2/Si thin films have been investigated in details. The variations on the crystallographic …
Oxygen vacancy induced structure change and interface reaction in HfO2 films on native SiO2/Si substrate
K Yan, W Yao, Y Zhao, L Yang, J Cao, Y Zhu - Applied Surface Science, 2016 - Elsevier
The HfO 2 films were deposited on SiO 2 (native)/n-Si (100) substrates by electron beam
evaporation (EBE) technology. The structural evolution of the films during thermal annealing …
evaporation (EBE) technology. The structural evolution of the films during thermal annealing …
ALD precursors and reaction mechanisms
RG Gordon - Atomic Layer Deposition for Semiconductors, 2013 - Springer
Successful use of ALD requires chemical precursors with sufficient volatility, thermal stability,
and self-limited reactivity with surfaces. Effective ALD precursors are now known for most …
and self-limited reactivity with surfaces. Effective ALD precursors are now known for most …