In order to handle high power with good thermal stability at RF & microwave frequencies
wider bandgap semiconductor based transistors are highly desirable and GaN & AlGaN …

The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …

In this paper, we will discuss the rapid progress of third-generation semiconductors with
wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This …

We report an 80 nm gate-length In 0.17 Al 0.83 N/GaN high-electron mobility transistor
(HEMT) on silicon substrate with a record low gate leakage current of 7.12× 10− 7 A mm− 1 …

We report the first 94-GHz (W-band) large-signal performance of AlInN/GaN high-electron-
mobility transistors (HEMTs) grown on high-resistivity silicon (111) substrates. A maximum …

Device surface properties are critical for its performance such as channel electron density,
leakage current, subthreshold swing (SS), and noise in gallium nitride high-electron-mobility …

This letter reports on the demonstration of microwave power performance at 40 GHz on
AlGaN/GaN high-electron mobility transistor grown on silicon (111) substrate by molecular …

This paper proposes an analytical model for a dual gate AlGaN/GaN Metal oxide
semiconductor-high-electron-mobility transistor (MOS-HEMT) biosensor for electrical …

In this study, we report a novel structure of enhancement-mode metal-insulator-
semiconductor high electron mobility transistor (E-mode MIS HEMT) with p-GaN gate by …

This letter reports a 0.2-μ\rmm gate AlGaN/GaN high-electron-mobility transistors (HEMTs)
on an Si substrate passivated with an \rmAlN/\rmSiN_\rmx (4/20 nm) stack layer. The 4-nm …