Layer exchange (LE) is an interesting phenomenon in which metal and semiconductor
layers exchange during heat treatment. A great deal of effort has been put into research on …

Low-temperature synthesis of multilayer graphene (MLG) on arbitrary substrates is the key to
incorporating MLG-based functional thin films, including transparent electrodes, low …

Flexible thermoelectric generators are leading candidates for next‐generation energy‐
harvesting devices. Although SiGe, an environmentally‐friendly semiconductor, is the most …

Metal-semiconductor nanostructures are key objects for multifunctional electronics and
optical design. We report a new interatomic potential for atomistic simulation of a ternary Si …

In this work, polycrystalline silicon (poly-Si) thin films were synthesized using Au-induced
crystallization of amorphous silicon suboxide for the first time. The structure and elemental …

The kinetics of gold-induced crystallization (AuIC) of amorphous silicon suboxide (a-SiO x,
x= 0.2) films in the layer exchange mode was detailed studied by variation of the annealing …

Solar photovoltaics (PV) has the potential to take center stage in global energy in the future.
Today, crystalline silicon (c-Si) PV technology dominates the global PV market, with a share …

The present study reports Al induced crystallization of amorphous (a)-SiGe in the Al-Ge-Si
ternary system with the a-SiGe/Al bilayer structure on glass at low temperature∼ 350 C. The …

High-quality polycrystalline silicon films on low-cost and low-temperature substrates have
attracted much attention as promising materials for high-speed thin-film transistors and thin …

We report the synthesis of polycrystalline (poly)-SiGe alloy thin films through solid state
reaction of Si/Ge multilayer thin films on Si and glass substrates at low temperature of 500° …