Neuromemristive circuits for edge computing: A review

O Krestinskaya, AP James… - IEEE transactions on …, 2019 - ieeexplore.ieee.org
The volume, veracity, variability, and velocity of data produced from the ever increasing
network of sensors connected to Internet pose challenges for power management …

Oxide-based RRAM materials for neuromorphic computing

XL Hong, DJJ Loy, PA Dananjaya, F Tan… - Journal of materials …, 2018 - Springer
In this review, a comprehensive survey of different oxide-based resistive random-access
memories (RRAMs) for neuromorphic computing is provided. We begin with the history of …

[HTML][HTML] Brain-inspired computing with memristors: Challenges in devices, circuits, and systems

Y Zhang, Z Wang, J Zhu, Y Yang, M Rao… - Applied Physics …, 2020 - pubs.aip.org
This article provides a review of current development and challenges in brain-inspired
computing with memristors. We review the mechanisms of various memristive devices that …

[HTML][HTML] Analog memristive synapse in spiking networks implementing unsupervised learning

E Covi, S Brivio, A Serb, T Prodromakis… - Frontiers in …, 2016 - frontiersin.org
Emerging brain-inspired architectures call for devices that can emulate the functionality of
biological synapses in order to implement new efficient computational schemes able to …

CMOS-compatible neuromorphic devices for neuromorphic perception and computing: a review

Y Zhu, H Mao, Y Zhu, X Wang, C Fu, S Ke… - … Journal of Extreme …, 2023 - iopscience.iop.org
Neuromorphic computing is a brain-inspired computing paradigm that aims to construct
efficient, low-power, and adaptive computing systems by emulating the information …

2D-material-based volatile and nonvolatile memristive devices for neuromorphic computing

X Xia, W Huang, P Hang, T Guo, Y Yan… - ACS Materials …, 2023 - ACS Publications
Neuromorphic computing can process large amounts of information in parallel and provides
a powerful tool to solve the von Neumann bottleneck. Constructing an artificial neural …

[HTML][HTML] Impact of vacancies and impurities on ferroelectricity in PVD-and ALD-grown HfO2 films

L Baumgarten, T Szyjka, T Mittmann… - Applied Physics …, 2021 - pubs.aip.org
We investigate the emerging chemical states of TiN/HfO 2/TiN capacitors and focus
especially on the identification of vacancies and impurities in the ferroelectric HfO 2 layers …

[HTML][HTML] Optimization of non-linear conductance modulation based on metal oxide memristors

H Liu, M Wei, Y Chen - Nanotechnology Reviews, 2018 - degruyter.com
As memristor-simulating synaptic devices have become available in recent years, the
optimization on non-linearity degree (NL, related to adjacent conductance values) is …

Memristor Based on TiOx/Al2O3 Bilayer as Flexible Artificial Synapse for Neuromorphic Electronics

F Wu, P Cao, Z Peng, S Ke, G Cheng… - … on Electron Devices, 2021 - ieeexplore.ieee.org
Flexible memristor is one of the most promising wearable devices for abundant data storage
and processing. In this work, interface engineering by inserting the Al 2 O 3 barrier layer is …

A computationally efficient compact model for ferroelectric switching with asymmetric nonperiodic input signals

AD Gaidhane, R Dangi, S Sahay… - … on Computer-Aided …, 2022 - ieeexplore.ieee.org
In this article, we develop a Verilog-A implementable compact model for the dynamic
switching of ferroelectric FinFETs (Fe-FinFETs) for asymmetric nonperiodic input signals. We …